BLF6G20-45 /T3 NXP Semiconductors, BLF6G20-45 /T3 Datasheet - Page 8

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BLF6G20-45 /T3

Manufacturer Part Number
BLF6G20-45 /T3
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G20-45 /T3

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
2.5W(Typ)
Power Gain (typ)@vds
19.2@28VdB
Frequency (min)
1.805GHz
Frequency (max)
2GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
5S
Drain Source Resistance (max)
200(Typ)@6.15Vmohm
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
14%
Mounting
Screw
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G20-45,135
NXP Semiconductors
9. Package outline
Fig 8.
BLF6G20-45_BLF6G20S-45_2
Product data sheet
Flanged ceramic package; 2 mounting holes; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
Package outline SOT608A
VERSION
OUTLINE
SOT608A
0.182
0.148
4.62
3.76
A
H
0.285
0.275
7.24
6.99
b
U 2
A
A
0.006
0.004
0.15
0.10
c
IEC
10.21
10.01
0.402
0.394
D
10.29
10.03
0.405
0.395
D 1
10.21
10.01
0.402
0.394
JEDEC
E
U 1
D 1
D
q
b
10.29
10.03
0.405
0.395
REFERENCES
E 1
Rev. 02 — 25 August 2008
1
2
3
0
0.045
0.035
1.14
0.89
F
BLF6G20-45; BLF6G20S-45
w 2
15.75
14.73
0.620
0.580
EIAJ
H
scale
M
5
C
C
0.130
0.115
3.30
2.92
M
p
F
B
p
10 mm
0.067
0.053
1.70
1.35
Q
w 1
15.24
0.600
M
q
A
M
20.45
20.19
0.805
0.795
U 1
B
M
PROJECTION
0.390
0.380
EUROPEAN
9.91
9.65
U 2
E 1
Power LDMOS transistor
0.010 0.020
0.25
w 1
c
Q
0.51
w 2
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
01-02-22
02-02-11
E
SOT608A
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