BLF6G20-45 /T3 NXP Semiconductors, BLF6G20-45 /T3 Datasheet - Page 2

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BLF6G20-45 /T3

Manufacturer Part Number
BLF6G20-45 /T3
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G20-45 /T3

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.2 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 225 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
2.5W(Typ)
Power Gain (typ)@vds
19.2@28VdB
Frequency (min)
1.805GHz
Frequency (max)
2GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
5S
Drain Source Resistance (max)
200(Typ)@6.15Vmohm
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
14%
Mounting
Screw
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G20-45,135
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF6G20-45_BLF6G20S-45_2
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF6G20-45 (SOT608A)
1
2
3
BLF6G20S-45 (SOT608B)
1
2
3
Type number
BLF6G20-45
BLF6G20S-45
Symbol
V
V
I
T
T
D
stg
j
DS
GS
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name
-
-
Rev. 02 — 25 August 2008
Description
flanged ceramic package; 2 mounting holes; 2 leads
ceramic earless flanged package; 2 leads
BLF6G20-45; BLF6G20S-45
Conditions
[1]
[1]
Simplified outline
1
2
1
2
3
Power LDMOS transistor
3
Graphic symbol
Min
-
-
-
© NXP B.V. 2008. All rights reserved.
0.5
65
2
2
Max
65
+13
13
+150
225
sym112
sym112
Version
SOT608A
SOT608B
1
3
1
3
2 of 12
Unit
V
V
A
C
C

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