BLF4G10-160 NXP Semiconductors, BLF4G10-160 Datasheet - Page 9

• Manufacturer Part Number: BLF4G10-160
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF4G10-160

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.065 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 15 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: LDMOST-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF4G10-160,112

NXP Semiconductors
BLF4G10-160_1
Product data sheet
Fig 14. Circuit schematic for 869 MHz to 894 MHz CDMA demo test circuit
Fig 15. Component layout for 869 MHz to 894 MHz CDMA demo test circuit
L1
V
bias
See
The other side is unetched and serves as a ground plane.
See
(12 V - 28 V)
C1
Table 9
Table 9
C3
R10
R1
R2
R3
RF in
Q1
for a list of components
for a list of components.
R9
Q1
L2
C4
L1
V
bias
R4
Q2
R6
R5
C1
(12 V - 28 V)
R1
C3
R7
C4
R7
C5
L2
R6
R2
R4
R5
R8
C5
L3
R8
C6
R3
R10
L3
C7
C2
BLF4G10-160
R9
Q2
C6
L4
L5
CDMA in
Rev. 01 — 22 June 2007
C7
C2
L4
Q3
L5
Q3
BLF4G10-160
CDMA out
L6
L6
L7
L7
C8
C8
L8
UHF power LDMOS transistor
C9
C9 C10
L8
BLF4G10-160
C10
V
DD
V
(28 V)
L9
DD
C11
(28 V)
© NXP B.V. 2007. All rights reserved.
C12
L9
L10
C11
001aag559
RF out
001aag560
C12
L10
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