BF556B T/R NXP Semiconductors, BF556B T/R Datasheet - Page 3

• Manufacturer Part Number: BF556B T/R
• Description: RF JFET TAPE7 FET-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF556B T/R

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: - 30 V
• Maximum Drain Gate Voltage: - 30 V
• Package / Case: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF556B,215

Philips Semiconductors
5. Limiting values
6. Thermal characteristics
9397 750 13393
Product data sheet
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 6:
[1]
Symbol
V
V
V
I
P
T
T
Symbol
R
G
Fig 1. Power derating curve.
stg
j
DS
GSO
GDO
tot
th(j-a)
Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm
Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain
lead 10 mm
Limiting values
Thermal characteristics
Parameter
drain-source voltage (DC)
gate-source voltage
gate-drain voltage (DC)
forward gate current (DC)
total power dissipation
storage temperature
junction temperature
Parameter
thermal resistance from junction
to ambient
2
2
.
.
(mW)
P
tot
Rev. 03 — 5 August 2004
300
200
100
0
0
BF556A; BF556B; BF556C
N-channel silicon junction field-effect transistors
50
Conditions
open drain
open source
T
amb
Conditions
25 C
100
T
amb
( C)
mrc166
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
150
Min
-
-
-
-
-
-
65
[1]
Typ
500
Max
10
250
+150
150
30
30
30
Unit
K/W
Unit
V
V
V
mA
mW
C
C
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