BF909WR T/R NXP Semiconductors, BF909WR T/R Datasheet - Page 12

• Manufacturer Part Number: BF909WR T/R
• Description: RF MOSFET Small Signal TAPE-7 MOS-RFSS
• Manufacturer: NXP Semiconductors

Specifications of BF909WR T/R

• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Drain-source Breakdown Voltage: 7 V
• Gate-source Breakdown Voltage: 6 V
• Continuous Drain Current: 40 mA
• Power Dissipation: 280 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CMPAK-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BF909WR,115

NXP Semiconductors
Revision history
Revision history
Document ID
BF909_N_2
Modifications:
BF909_1
Release date
20071119
19950425
•
Fig.1 and 2 on page 2; Figure note changed
Data sheet status
Product data sheet
Product specification
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
Change notice
-
-
N-channel dual gate MOS-FETs
BF909; BF909R
Supersedes
BF909_1
-
Date of release: 19 November 2007
Document identifier: BF909_N_2
All rights reserved.