BF909WR T/R NXP Semiconductors, BF909WR T/R Datasheet - Page 12
![RF MOSFET Small Signal TAPE-7 MOS-RFSS](/photos/16/0/160096/sot343_sml.jpg)
BF909WR T/R
Manufacturer Part Number
BF909WR T/R
Description
RF MOSFET Small Signal TAPE-7 MOS-RFSS
Manufacturer
NXP Semiconductors
Datasheet
1.BF909R235.pdf
(12 pages)
Specifications of BF909WR T/R
Configuration
Dual
Transistor Polarity
Dual N-Channel
Drain-source Breakdown Voltage
7 V
Gate-source Breakdown Voltage
6 V
Continuous Drain Current
40 mA
Power Dissipation
280 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CMPAK-4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BF909WR,115
NXP Semiconductors
Revision history
Revision history
Document ID
BF909_N_2
Modifications:
BF909_1
Release date
20071119
19950425
•
Fig.1 and 2 on page 2; Figure note changed
Data sheet status
Product data sheet
Product specification
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Change notice
-
-
N-channel dual gate MOS-FETs
BF909; BF909R
Supersedes
BF909_1
-
Date of release: 19 November 2007
Document identifier: BF909_N_2
All rights reserved.