BLF6G38-10G NXP Semiconductors, BLF6G38-10G Datasheet - Page 9

• Manufacturer Part Number: BLF6G38-10G
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G38-10G

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.256 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Continuous Drain Current: 3.1 A
• Maximum Operating Temperature: + 200 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Transistor Type: N Channel
• Drain Source Voltage Vds: 65V
• Continuous Drain Current Id: 3.1A
• Power Dissipation Pd: 10W
• No. Of Pins: 3
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G38-10G,112

NXP Semiconductors
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Table 9.
For test circuit, see
Component
C1, C3, C6
C2
C4
C5
C7
L1
R1, R2
Fig 11. Component layout for 3400 MHz to 3600 MHz test circuit BLF6G38-10G
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
thickness = 0.76 mm.
See
List of components
Table 9
C1
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
ferrite SMD bead
SMD resistor
BLF6G38-10G
Input Rev 1
NXP
Figure 10
for list of components.
Rev. 01 — 3 February 2009
and
C2
BLF6G38-10; BLF6G38-10G
Figure
11.
PCB1
R1
C3
C4
Value
20 pF
1.5 F
6.8 F
10 F; 50 V
220 F; 63 V
-
8.2
WiMAX power LDMOS transistor
BLF6G38-10G
Output Rev 1
NXP
C5
L1
Remarks
ATC 100A
TDK
ATC 100A
TDK
Elco
Ferroxcube bead
Thin film
© NXP B.V. 2009. All rights reserved.
R2
001aaj372
C6
PCB2
C7
r
= 3.5 and
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