BLF6G38-10G NXP Semiconductors, BLF6G38-10G Datasheet - Page 10
![RF MOSFET Small Signal LDMOS TNS](/photos/41/59/415997/sot975c_3d_sml.gif)
BLF6G38-10G
Manufacturer Part Number
BLF6G38-10G
Description
RF MOSFET Small Signal LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G38-10G112.pdf
(15 pages)
Specifications of BLF6G38-10G
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.256 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Continuous Drain Current
3.1 A
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Package / Case
CDFM
Transistor Type
N Channel
Drain Source Voltage Vds
65V
Continuous Drain Current Id
3.1A
Power Dissipation Pd
10W
No. Of Pins
3
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G38-10G,112
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLF6G38-10G
Manufacturer:
NXP
Quantity:
1 000
Company:
Part Number:
BLF6G38-10G
Manufacturer:
NXP
Quantity:
5 000
Part Number:
BLF6G38-10G
Manufacturer:
PHILIPS/飞利浦
Quantity:
20 000
NXP Semiconductors
BLF6G38-10_BLF6G38-10G_1
Product data sheet
Table 10.
f
(GHz)
BLF6G38-10
3.40
3.45
3.50
3.55
3.60
BLF6G38-10G
3.40
3.45
3.50
3.55
3.60
Measured test circuit impedances
Rev. 01 — 3 February 2009
BLF6G38-10; BLF6G38-10G
Z
( )
12.61 - j23.96
14.16 - j22.23
16.00 - j21.74
17.43 - j22.91
17.11 - j25.43
19.33 - j22.54
21.20 - j21.65
23.02 - j22.41
23.70 - j24.95
21.98 - j28.26
i
WiMAX power LDMOS transistor
Z
( )
5.21 - j6.31
5.47 - j6.01
5.72 - j5.87
5.90 - j5.91
5.92 - j6.09
4.71 - j7.09
4.75 - j6.82
4.72 - j6.65
4.60 - j6.55
4.36 - j6.47
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© NXP B.V. 2009. All rights reserved.
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