NE85634 NEC, NE85634 Datasheet
NE85634
Specifications of NE85634
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NE85634 Summary of contents
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... HIGH RELIABILITY METALLIZATION • LOW COST DESCRIPTION NEC's NE856 series of NPN epitaxial silicon transistors is designed for low cost amplifier and oscillator applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The NE856 series offers excellent performance and reliability at low cost ...
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... NE85634 NE85635 NE85639/39R 2SC3357 2SC3603 2SC4093 34 35 TYP MAX MIN TYP MAX MIN TYP MAX 6.5 7.0 1.4 2.1 3.4 13 120 300 50 ...
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... A 150 200 (°C) A NE85632 (V) CB NE856 SERIES NE85632 AND NE85634 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.4 NE85634 Ceramic Substrate 2 0.7 mm Aluminum R = 62.5˚C/W TH (J-A) Heat Sink for NE85632 1.6 10 1.2 7.8 3.8 NE85632 ...
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... NE85634 50 70 100 50 70 100 NE856 SERIES NE85635 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY MAG 21E 0 -5 0.1 0.2 0.3 0 Frequency, f (GHz) NE85632 AND NE85634 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT - - 100 dBμV/50 Ω Ω - -50 - 100 MHz 200-190 MHz 3 X -30 20 ...
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TYPICAL PERFORMANCE CURVES NE85633 FORWARD INSERTION GAIN AND MAXIMUM AVAILABLE GAIN vs. FREQUENCY MAG 15 2 |S21E 0.1 0.2 0.3 0.5 0.7 Frequency, f (GHz) NE85600 TYPICAL NOISE ...
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... 500 1.51 17.97 0.1 800 1.73 13.76 0.21 900 1.80 12.65 0.26 1000 1.86 12.2 0.38 1500 2.13 9.5 0.44 NE85634 TYPICAL NOISE PARAMETERS (T = 25°C) A FREQ. (MHz) ANG Rn/ 4 200 50 0.10 300 159 0.10 500 1000 (T = 25°C) A NE85635 ANG ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 j10 -j10 -j25 NE85600 -j50 FREQUENCY S 11 (MHz) MAG ANG 100 0.881 -40.9 200 0.833 -75.0 500 0.803 -129.8 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 NE85618 -0 FREQUENCY S 11 (MHz) MAG ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0 -0.2 -0.4 NE85619 -0 FREQUENCY S 11 (MHz) MAG ANG 50 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 0.8 0.6 0.4 S 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 NE85630 -0 2 FREQUENCY S 11 (MHz) MAG ANG 50 0.931 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85632 FREQUENCY S 11 (MHz) MAG ANG 100 0.71 -50 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 NE85633 FREQUENCY S 11 (MHz) MAG ...
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... TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0.4 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85634 FREQUENCY S 11 (MHz) MAG ANG 100 0.714 -42.6 200 0.508 -77.9 400 0.326 -119.5 500 0.286 -132.9 600 0.264 -144.5 800 0.237 -162.6 1000 0 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0.8 1 -0.2 -0.4 -0.6 -0.8 -1 NE85635 FREQUENCY S 11 (MHz) MAG ANG 100 ...
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TYPICAL COMMON EMITTER SCATTERING PARAMETERS 1 0.8 0.6 0 0.2 0.2 0.4 0.6 0 -0.2 -0.4 -0.6 -0.8 -1 NE85639 FREQUENCY S 11 (MHz) MAG ...
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NE85618 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR ...
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NE85619 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR ...
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NE85630 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR ...
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NE85633 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR ...
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NE85635 NONLINEAR MODEL SCHEMATIC BASE BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 32e- 1. XTF NR 0.991 VTF VAR ...
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NE85639 NONLINEAR MODEL SCHEMATIC Base BJT NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters IS 6e-16 MJC BF 120 XCJC NF 0.98 CJS VAF 10 VJS IKF 0.08 MJS ISE 3.2e- 1. XTF NR 0.991 VTF VAR ...
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OUTLINE DIMENSIONS (Units in mm) NE85600 (CHIP) 0.35 0.30 0.22 BASE EMITTER 0.07φ (Chip Thickness: 140 to 160 μm) PACKAGE OUTLINE 18 (SOT-343) 2.1 ± 0.2 1.25 ± 0 0.65 2.0 ± 0.2 0. +0.10 0.4 ...
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OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 30 (SOT-323) 2.1 ± 0.2 1.25 ± 0.1 2 0.65 2.0 ± 0.2 1 MARKING 1. Emitter 0.15 2. Base 3. Collector 0.9 ± 0 0.1 PACKAGE OUTLINE 32 ...
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... MAX 0.55 +0.10 0.4 -0.05 (LEADS 1.9 PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 0.16 +0.10 -0.06 4. Emitter 1.8 +0.10 -0.05 PIN CONNECTIONS 1. Emitter 2. Collector -0.06 3. Emitter 4. Base NE856 SERIES PACKAGE OUTLINE 39 RECOMMENDED P.C.B. LAYOUT 2 1.9 1 1.0 PACKAGE OUTLINE 39R RECOMMENDED P ...
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... NE85618-T1-A 3000 NE85619-T1-A 3000 NE85630-T1-A 3000 NE85632-A 1 NE85633-T1B-A 3000 NE85634-T1-A 1000 NE85635 1 NE85639-T1-A 3000 NE85639R-T1 3000 Note: 1. Embossed tape 12 mm wide. Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury ...
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Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...