NE851M03 NEC, NE851M03 Datasheet

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NE851M03

Manufacturer Part Number
NE851M03
Description
RF Bipolar Small Signal NPN Low Volt Osc
Manufacturer
NEC
Datasheet

Specifications of NE851M03

Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Continuous Collector Current
0.1 A
Power Dissipation
130 mW
Package / Case
M03
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NE851M03-T1-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
DESCRIPTION
NEC's NE851M03 transistor is designed for oscillator appli-
cations up to 3 GHz. The NE851M03 features low voltage
operation, low phase noise, and high immunty to pushing ef-
fects. NEC's low profile/flat lead style "M03" package is ideal
for today's portable wireless applications.
ELECTRICAL CHARACTERISTICS
FEATURES
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.
3. Collector to base capacitance when the emitter is grounded
• NEW MINIATURE M03 PACKAGE:
• IDEAL FOR ≤ 3 GHz OSCILLATORS
• LOW 1/f NOISE
• LOW PUSHING FACTOR
SYMBOLS
– Small transistor outline
– Low profile / 0.59 mm package height
– Flat lead style for better RF performance
|S
|S
I
C
I
h
NF
CBO
EBO
21E
21E
f
f
RE
FE
T
T
|
|
2
2
Gain Bandwidth at V
Gain Bandwidth
Insertion Power Gain at V
Insertion Power Gain
Noise Figure at V
Reverse Transfer Capacitance
Collector Cutoff Current at V
Emitter Cutoff Current at V
DC Current Gain
NEC's NPN SILICON TRANSISTOR
at V
2
CE
at V
PARAMETERS AND CONDITIONS
= 1 V, I
CE
CE
EIAJ
at V
CE
= 1 V, I
= 1 V, I
= 1 V, I
CE
CE
PACKAGE OUTLINE
1
EB
REGISTERED NUMBER
C
CB
PART NUMBER
= 1 V, I
= 1 V, I
= 10 mA, f = 2 GHz, Zs = Z
= 1 V, I
C
C
3
= 5 V, I
at V
C
= 5 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 5 mA
(T
C
C
CB
C
A
= 5 mA, f = 2 GHz
= 15 mA, f = 2 GHz
= 25°C)
E
= 0
= 0.5 V, I
= 0
E
= 0 mA, f = 1 MHz
opt
OUTLINE DIMENSIONS
1.4 ±0.1
California Eastern Laboratories
(0.9)
0.59±0.05
UNITS
0.45
0.45
GHz
GHz
dB
dB
dB
pF
nA
nA
PACKAGE OUTLINE M03
0.2
+0.1
-0
1
2
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
1.2±0.05
0.8±0.1
MIN
100
3.0
5.0
3.0
4.5
NE851M03
(Units in mm)
NE851M03
2SC5800
3
M03
TYP
120
4.5
6.5
4.0
5.5
1.9
0.6
0.15
0.3
-0.05
+0.1
+0.1
-0
MAX
600
600
145
2.5
0.8

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NE851M03 Summary of contents

Page 1

... LOW PUSHING FACTOR DESCRIPTION NEC's NE851M03 transistor is designed for oscillator appli- cations GHz. The NE851M03 features low voltage operation, low phase noise, and high immunty to pushing ef- fects. NEC's low profile/flat lead style "M03" package is ideal for today's portable wireless applications. ...

Page 2

... COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 0.2 0.4 0.6 Base to Emitter Voltage ORDERING INFORMATION (T = 25°C) A UNITS RATINGS PART NUMBER V 9.0 NE851M03-T1-A V 5.5 V 1.5 mA 100 mW 200 °C 150 °C -65 to +150 (T = 25°C) A 125 150 (°C) A 0.8 1.0 (V) BE QUANTITY 3 k pcs./reel REVERSE TRANSFR CAPACITANCE vs ...

Page 3

TYPICAL PERFORMANCE CURVES GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz Collector Current INSERTION POWER GAIN vs. FREQUENCY ...

Page 4

TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 MSG MAG 21e Collector Current INSERTION POWER GAIN and MAG vs. COLLECTOR CURRENT ...

Page 5

TYPICAL PERFORMANCE CURVES NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current NOISE FIGURE and ASSOCIATED GAIN vs. ...

Page 6

... TYPICAL SCATTERING PARAMETERS j50 j100 j25 j10 100 -j10 -j100 -j25 -j50 0.100 to 6.000 GHz by 0.100 NE851M03 FREQUENCY S 11 GHz MAG ANG 0.100 0.824 -46.13 0.200 0.748 -80.11 0.300 0.705 -104.73 0.400 0.679 -121.76 0.500 0.673 -141.72 0.700 0.666 -155.88 1.000 ...

Page 7

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 0.100 to 6.000 GHz b y 0.100 NE851M03 FREQUENCY S 11 GHz MAG ANG 0.100 0.695 -61.64 0.200 0.624 -100.58 0.300 0.595 -123.61 0.400 0.582 -137.95 0.500 0.609 -154.61 0.700 0.608 -165.54 1.000 0.608 -175 ...

Page 8

... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 0.100 to 6.000 GHz b y 0.100 NE851M03 FREQUENCY S 11 GHz MAG ANG 0.100 0.555 -83.93 0.200 0.525 -123.08 0.300 0.519 -141.74 0.400 0.518 -152.59 0.500 0.570 -165.20 0.700 0.572 -173.28 1.000 0.573 179 ...

Page 9

... The appropriate values for the 1/f noise parameters (AF and KF) 20 shall be chosen from the table below, according to the desired 0 current range. 1. For a better understanding on AF and KF parameters, please refer to AN1026. MODEL TEST CONDITIONS Frequency: Bias: Date: 3-238 Collecto r NE851M03 0.04 pF 0.28 pF 0.004 nH 0.004 nH 0.15 pF 0.08 pF 0.005 pF 0.6 nH 0 1.40 2 ...

Page 10

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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