UPA810T NEC, UPA810T Datasheet
UPA810T
Manufacturer Part Number
UPA810T
Description
RF Bipolar Small Signal NPN High Frequency
Manufacturer
NEC
Datasheet
1.UPA810T-T1-A.pdf
(3 pages)
Specifications of UPA810T
Dc Collector/base Gain Hfe Min
70
Dc Current Gain Hfe Max
250
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Emitter- Base Voltage Vebo
3 V
Continuous Collector Current
0.1 A
Package / Case
SO-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
UPA810T-T1
Manufacturer:
NEC
Quantity:
30 000
Part Number:
UPA810T-T1
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
NEC's UPA810T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
various hand-held wireless applications.
ELECTRICAL CHARACTERISTICS
FEATURES
DESCRIPTION
Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.
• SMALL PACKAGE STYLE:
• LOW NOISE FIGURE:
• HIGH GAIN:
• EXCELLENT LOW VOLTAGE, LOW CURRENT
• HIGH COLLECTOR CURRENT: 100 mA
Date Published: June 28, 2005
T
SYMBOLS
, low voltage bias and small size make this device suited for
h
FE1
|S
2 NE856 Die in a 2 mm x 1.25 mm package
NF = 1.2 dB TYP at 1 GHz
|S
PERFORMANCE
h
Cre
I
I
CBO
NF
EBO
21E
FE 1
f
21E
/h
T
2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA810T-T1, 3K per reel.
2
FE2
|
2
|
2
= 9.0 dB TYP at 1 GHz
Collector Cutoff Current at V
Emitter Cutoff Current at V
Forward Current Gain at V
Gain Bandwidth at V
Feedback Capacitance at V
Insertion Power Gain at V
Noise Figure at V
h
FE
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Ratio:
PARAMETERS AND CONDITIONS
h
h
FE1
FE2
PACKAGE OUTLINE
= Smaller Value of Q
= Larger Value of Q
CE
PART NUMBER
= 3 V, I
CE
= 3 V, I
CE
EB
CE
C
CB
CB
= 3 V, I
= 7 mA, f = 1 GHz
= 1 V, I
= 3 V, I
= 3 V, I
C
PRELIMINARY DATA SHEET
(T
= 10 V, I
FREQUENCY TRANSISTOR
= 7 mA
A
= 25°C)
1
C
C
C
1
or Q
, or Q
=7 mA, f = 1 GHz
E
= 0
= 7 mA
= 0, f = 1 MHz
NPN SILICON HIGH
E
= 0
2
2
UNITS
GHz
µA
µA
pF
dB
dB
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
OUTLINE DIMENSIONS
2.0 ± 0.2
0.9 ± 0.1
1.3
0.7
0.85
MIN
0.65
3.0
70
7
PACKAGE OUTLINE S06
3
2
1
SILICON TRANSISTOR
UPA810T
(Top View)
2.1 ± 0.1
1.25 ± 0.1
0 ~ 0.1
UPA810T
(Units in mm)
TYP
S06
120
4.5
0.7
1.2
9
6
5
4
0.2 (All Leads)
0.15
MAX
+0.10
- 0.05
250
1.0
1.0
1.5
2.5
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UPA810T Summary of contents
Page 1
... Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA810T-T1, 3K per reel. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version ...
Page 2
... Embossed tape 8mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter) face to perforation side of tape PACKAGING Embossed tape 8mm wide. Pin 6 (Q1 Base), Pin 5 (Q1 Emmitter) Pin 4 (Q2 Emitter) face to perforation side of tape UPA810T A Business Partner of NEC Compound Semiconductor Devices, Ltd. ...
Page 3
Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...