NE46134 NEC, NE46134 Datasheet

NE46134

Manufacturer Part Number

NE46134

Description

RF Bipolar Power NPN Med Pwr Hi-Freq

Manufacturer

NEC

Datasheet

1.NE46134-T1-AZ.pdf (11 pages)

Specifications of NE46134

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NE46134-T1-AZ

Manufacturer:

SANYO

Quantity:

5 600

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• HIGH DYNAMIC RANGE

• LOW IM DISTORTION: -40 dBc

• HIGH OUTPUT POWER : 27.5 dBm at TYP

• LOW NOISE: 1.5 dB TYP at 500 MHz

• LOW COST

FEATURES

DESCRIPTION

Notes:

1. Electronic Industrial Association of Japan.

2. Pulsed: PW ≤ 350 ms, Duty Cycle ≤ 2%

3. RS = RL = 50 Ω untuned

NEC's NE461 series of NPN silicon epitaxial bipolar transis-

tors is designed for medium power applications requiring high

dynamic range. This device exhibits an outstanding combina-

tion of high gain and low intermodulation distortion, as well as

low noise figure. The NE461 series offers excellent perfor-

mance and reliability at low cost through NEC's titanium,

platinum, gold metallization system and direct nitride passiva-

tion of the surface of the chip. Devices are available in a low

cost surface mount package (SOT-89) as well as in chip form.

ELECTRICAL CHARACTERISTICS

SYMBOLS

TH (J-C)

TH (J-A)

CBO

EBO

21E

1dB

MIN

Gain Bandwidth Product at V

Minimum Noise Figure

Linear Gain, V

Insertion Power Gain at 10 V, 50 mA, f = 1.0 GHz

DC Current Gain

Collector Cutoff Current at V

Emitter Cutoff Current at V

Output Power at 1 dB Compression, V

Intermodulation Distortion, 10 V, 100 mA, F1 = 1.0 GHz, F2 = 0.99 GHz,

Total P

Thermal Resistance (Junction to Case)

Thermal Resistance (Junction to Ambient)

OUT

= 20 dBm

= 12.5 V, I

PARAMETERS AND CONDITIONS

at V

EIAJ

NEC's NPN MEDIUM POWER

at V

= 10 V, I

PACKAGE OUTLINE

REGISTERED NUMBER

MICROWAVE TRANSISTOR

PART NUMBER

= 10 V, I

= 100 mA, 1.0 GHz

= 100 mA, 2.0 GHz

= 2 V, I

= 10 V, I

= 20 V, I

= 10 V, I

= 50 mA

= 0 mA

= 50 mA, 1 GHz

= 12.5 V, I

= 0 mA .

= 50 mA, 500 MHz

= 25°C)

= 100 mA

= 100 mA, 1.0 GHz

= 100 mA, 2.0 GHz

30.0

28.0

26.0

24.0

22.0

20.0

18.0

16.0

14.0

12.0

UNITS

°C/W

dBm

GHz

dBc

µA

TYPICAL OUTPUT POWER

f = 1.0 GHz, I

Input Power, P

vs. INPUT POWER

MIN

-40.0

27.0

NE46134

NE46100

00 (CHIP)

TYP MAX MIN

10.0

5.5

1.5

2.0

9.0

NE46100

NE46134

= 100 mA

200

(dBm)

5.0

-40.0

12.5 V

5.5

10 V

NE46134

2SC4536

5 V

312.5

27.5

TYP MAX

5.5

1.5

2.0

8.0

7.0

32.5

200

5.0

Related parts for NE46134

NE46134 Summary of contents

Page 1

... UNITS MIN TYP MAX MIN GHz 5.5 dB 1.5 dB 2 10.0 5.5 40 200 40 5.0 µA µA 5.0 dBm 27.0 dBm dBc -40.0 -40.0 30 °C/W °C NE46134 2SC4536 34 TYP MAX 5.5 1.5 2.0 8.0 7.0 200 5.0 5.0 27.5 32.5 312.5 ...

... NE46134 R TH (J-C) 32.5˚C/W WITH INFINITE HEAT SINK 2.0 NE46134 R TH (J-A) 1.0 312.5˚C/W WITH INFINITE HEAT SINK 0 100 150 85 87.5 Ambient Temperature, T (°C) A NE46100, NE46134 NOISE FIGURE vs. COLLECTOR CURRENT GHz 100 Collector Current, I (mA Ω Untuned 25°C) A RN/50 ...

Page 3

... IP 32.6 dBm 3 30.0 20.0 P OUT (Total) 10.0 0.0 -10.0 -20.0 -30.0 -40.0 -50 Input Power, P Total (dBm) IN NE46100, NE46134 INTERMODULATION DISTORTION vs. COLLECTOR CURRENT f = 1.0 GHz -10 -20 -30 -40 - 120 Collector Current, I (mA) C Total P = 6.0 dBm 1.0 GHz 0.99 GHz 1 2 Note: IM > ...

Page 4

... NE46100, NE46134 TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 GHz j10 GHz -j10 GHz .1 GHz -j25 -j50 NE46100 FREQUENCY S 11 (MHz) MAG ANG 100 0.778 -137 200 0.815 -159 500 0.826 -177 800 0.827 176 1000 0.826 173 1200 0.825 170 1400 0 ...

Page 5

... NE46100, NE46134 25° +90 ˚ 0.1 GHz +120 ˚ +60 ˚ ˚ + GHz .15 .2 .25 S ˚ GHz 0.1 GHz 10 -30 ˚ ˚ -120 ˚ ...

Page 6

TYPICAL COMMON EMITTER SCATTERING PARAMETERS NE46100 100 FREQUENCY S 11 (MHz) MAG ANG 100 0.791 -139 200 0.809 -161 500 0.822 -177 800 0.815 176 1000 0.819 173 1200 0.818 170 ...

Page 7

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 j10 2.5 GHz 2.5 GHz -j10 S 11 .05 GHz .05 GHz -j25 -j50 NE46134 FREQUENCY S 11 (GHz) MAG ANG 0.05 0.425 -99.7 0.10 0.412 -136.7 0.20 0.393 -166.1 0.40 0.385 171.3 0.60 0.387 156.0 0.80 0.392 143 ...

Page 8

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS NE46134 100 FREQUENCY S 11 (GHz) MAG ANG 0.05 0.366 -103.2 0.10 0.374 -141.4 0.20 0.361 -168.7 0.40 0.358 169.1 0.60 0.363 154.2 0.80 0.368 141.6 1.00 0.369 130.7 1.20 0.372 120.0 1.40 0.366 110.4 1.60 0.359 100 ...

Page 9

... TYPICAL COMMON EMITTER SCATTERING PARAMETERS j50 j25 j10 S 11 2.5 GHz 2.5 GHz -j10 S 11 .05 GHz .05 GHz -j25 -j50 NE46134 FREQUENCY S 11 (GHz) MAG ANG 0.05 0.432 -91.9 0.10 0.372 -129.4 0.20 0.348 -161.2 0.40 0.343 173.5 0.60 0.343 157.1 ...

Page 10

... PART NUMBER QUANTITY NE46100 100 NE46134-T1-AZ 1000 Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale ...

Page 11

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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