NE851M13 NEC, NE851M13 Datasheet
NE851M13
Specifications of NE851M13
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NE851M13 Summary of contents
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... LOW PUSHING FACTOR DESCRIPTION NEC's NE851M13 transistor is designed for oscillator applica- tions GHz. The NE851M13 features low voltage operation, low phase noise, and high immunty to pushing effects. NEC's new low profile/flat lead style "M13" package is ideal for today's portable wireless applications. ...
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... COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 0.2 0.4 0.6 Base to Emitter Voltage 25°C) ORDERING INFORMATION A UNITS RATINGS PART NUMBER V 9 NE851M13-T3-A V 5.5 V 1.5 mA 100 mW 140 150 °C -65 to +150 ° 25°C) A 125 150 (°C) A 0.8 1.0 (V) BE QUANTITY 10 k pcs./reel REVERSE TRANSFR CAPACITANCE vs ...
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... GHz Collector Current INSERTION POWER GAIN vs. FREQUENCY 0.1 1 Frequency, f (GHz) INSERTION POWER GAIN vs. FREQUENCY 0.1 1 Frequency, f (GHz 25°C) A 100 (mA NE851M13 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT GHz Collector Current, I (mA) C INSERTION POWER GAIN vs. FREQUENCY 0.1 1 Frequency, f (GHz) INSERTION POWER GAIN vs. FREQUENCY 0.1 1 ...
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TYPICAL PERFORMANCE CURVES INSERTION POWER GAIN, MAG, MSG vs. COLLECTOR CURRENT 20 MSG MAG 21e Collector Current INSERTION POWER GAIN and MAG vs. COLLECTOR CURRENT ...
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... I C -10 -15 -20 -15 -10 -5 Input Power, P (dBm 25° 100 (mA 100 (mA NE851M13 NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current, I (mA) C NOISE FIGURE and ASSOCIATED GAIN vs. COLLECTOR CURRENT GHz Collector Current, I (mA) C OUTPUT POWER AND COLLECTOR CURRENT vs. INPUT POWER GHz ...
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... TYPICAL SCATTERING PARAMETERS j50 j100 j25 j10 100 -j10 -j100 -j25 -j50 0.100 to 4.000 GHz by 0.050 NE851M13 FREQUENCY S 11 GHz MAG ANG 0.100 0.831 -46.49 0.200 0.789 -81.92 0.300 0.765 -106.07 0.400 0.750 -122.16 0.500 0.706 -133.99 0.600 0.699 -142.06 0.700 ...
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... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 0.100 to 4.000GHz by 0.050 NE851M13 FREQUENCY S 11 GHz MAG ANG 0.100 0.718 -62.67 0.200 0.689 -102.19 0.300 0.680 -124.30 0.400 0.677 -137.54 0.500 0.648 -147.55 0.600 0.645 -153.87 0.700 0.647 -158.99 0.800 ...
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... TYPICAL SCATTERING PARAMETERS j50 j25 j10 100 -j10 -j25 -j50 0.100 to 4.000GHz by 0.050 NE851M13 FREQUENCY S 11 GHz MAG ANG 0.100 0.592 -86.11 0.200 0.610 -124.37 0.300 0.620 -141.71 0.400 0.626 -151.34 0.500 0.610 -159.31 0.600 0.610 -163.96 0.700 0.613 -167.68 0.800 ...
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... Parameters Q1 C 0. 0.55 L 15e-12 L 0.1 2 MODEL TEST CONDITIONS 0.03 Frequency: Bias: 0 Date: 1.0e-9 1. 170e-15 1.65 CPKG Collector CEPKG 0.05 pF NE851M13 0.05 pF CBPKG 0.05 pF CEPKG 0.1 to 5.0 GHz 09/2001 A Business Partner of NEC Compound Semiconductor Devices, Ltd. 01/27/2003 ...
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Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...