NE334S01-T1 NEC, NE334S01-T1 Datasheet

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NE334S01-T1

Manufacturer Part Number
NE334S01-T1
Description
RF GaAs Low Noise HJ FET
Manufacturer
NEC
Datasheet
1.NE334S01.pdf (6 pages)

Specifications of NE334S01-T1

Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
85 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
80 mA
Power Dissipation
300 mW
Package / Case
SO-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
NE334S01-T1
Manufacturer:
NEC
Quantity:
8 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
NE334S01-T1
Manufacturer:
NEC
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
FEATURES
• VERY LOW NOISE FIGURE:
• HIGH ASSOCIATED GAIN:
• GATE WIDTH: 280 m
• TAPE & REEL PACKAGING OPTION AVAILABLE
• LOW COST PLASTIC PACKAGE
DESCRIPTION
The NE334S01 is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. Its excellent low noise and high asso-
ciated gain make it suitable for TVRO and other commercial
systems.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
SYMBOLS
0.25 dB TYP at 4 GHz
16.0 dB TYP at 4 GHz
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production
line as a "go-no-go" screening tuned for the "generic" type but not each specimen.
V
I
NF
G
I
GS(off)
GSO
DSS
g
A 1
m
1
Noise Figure, V
Associated Gain, V
Saturated Drain Current, V
Transconductance, V
Gate to Source Cutoff Voltage, V
Gate to Source Leak Current, V
C BAND SUPER LOW NOISE HJ FET
PARAMETERS AND CONDITIONS
DS
= 2.0 V, I
DS
PACKAGE OUTLINE
DS
PART NUMBER
= 2.0 V, I
= 2.0 V, I
PRELIMINARY DATA SHEET
DS
D
= 15 mA, f = 4 GHz
= 2.0 V, V
D
GS
DS
= 15 mA, f = 4 GHz
D
= 14 mA
= -3.0 V
= 2.0 V, I
(T
A
GS
= 25 C)
= 0 V
D
= 100 A,
RECOMMENDED
OPERATING CONDITION
SYMBOLS CHARACTERISTIC
V
P
I
DS
D
IN
UNITS
mA
mS
dB
dB
V
A
24
20
12
16
8
4
MAXIMUM AVAILABLE GAIN, FORWARD
1
California Eastern Laboratories
Drain to Source Voltage
Drain Current
Input Power
INSERTION GAIN vs. FREQUENCY
2
MIN
15.0
-0.2
|S
Frequency, f (GHz)
20
70
21S
|
2
4
MSG.
6
NE334S01
NE334S01
8 10
TYP
0.25
16.0
S01
-0.9
0.5
80
85
(T
UNITS MIN TYP MAX
dBm
mA
I
A
V
V
D
= 25 C)
DS
14
= 10 mA
= 2 V
MAG.
20
30
MAX
0.35
-2.5
150
10
15
2
2.5
20
0

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NE334S01-T1 Summary of contents

Page 1

... TAPE & REEL PACKAGING OPTION AVAILABLE • LOW COST PLASTIC PACKAGE DESCRIPTION The NE334S01 is a Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high asso- ciated gain make it suitable for TVRO and other commercial systems ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Drain to Source Voltage DS V Gate to Source Voltage GS I Drain Current DS T Channel Temperature CH T Storage Temperature STG P Total Power Dissipation T Note: 1. Operation in excess of ...

Page 3

TYPICAL COMMON SOURCE SCATTERING PARAMETERS j50 j25 j10 18 GHz 0 -j10 -j25 -j50 FREQUENCY S 11 (GHz) MAG ANG 0.1 1.002 -2.0 0.5 0.996 -9.7 1.0 0.981 -19.2 1.5 ...

Page 4

... NE334S01 TYPICAL COMMON SOURCE SCATTERING PARAMETERS 1.0 0.5 18 GHz 0 2 GHz -0.5 -1 FREQUENCY S 11 (GHz) MAG ANG 2.0 .998 -41.7 2.5 .927 -47.5 3.0 .860 -61.3 3.5 .829 -69.9 4.0 .802 -79.2 4.5 .716 -87.5 5.0 .659 -93.9 5.5 .601 -99.7 6 ...

Page 5

... NE334S01 ( +90˚ +45˚ +135˚ S12 + 180˚ – 1 GHz S21 1 GHz 18 GHz 18 GHz -45˚ -135˚ -90˚ MAG ...

Page 6

... CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE ORDERING INFORMATION PART NUMBER NE334S01 NE334S01-T1 NE334S01-T1B 4 1. Source 2. Drain 3. Source 4. Gate RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS ...

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