NE350184C-A NEC, NE350184C-A Datasheet - Page 3

• Manufacturer Part Number: NE350184C-A
• Description: RF GaAs Low Noise HJ FET
• Manufacturer: NEC

Specifications of NE350184C-A

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 40 mS
• Gate-source Breakdown Voltage: - 2 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Package / Case: SOT-343
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Remark The graphs indicate nominal characteristics.
250
200
150
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
80
60
40
20
–2.0
0
0
MINIMUM NOISE FIGURE,
0
ASSOCIATED GAIN vs. FREQUENCY
DRAIN CURRENT vs.
TOTAL POWER DISSIPATION
GATE TO SOURCE VOLTAGE
vs. AMBIENT TEMPERATURE
5
Gate to Source Voltage V
50
Ambient Temperature T
Frequency f (GHz)
10
Mounted on Glass Epoxy PCB
(1.08 cm
100
G
a
–1.0
15
2
NF
150
× 1.0 mm (t) )
min
20
A
GS
(˚C)
V
I
A
D
V
200
DS
(V)
= 10 mA
DS
= +25°C)
25
= 2 V
= 2 V
Data Sheet PG10584EJ01V0S
250
30
0
25
20
15
10
5
0
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
MINIMUM NOISE FIGURE,
80
60
40
20
ASSOCIATED GAIN vs. DRAIN CURRENT
0
0
f = 20 GHz
V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
DS
= 2 V
5
Drain to Source Voltage V
Drain Current I
10
1.0
15
NF
G
a
min
D
(mA)
20
DS
V
NE350184C
(V)
GS
25
–0.2 V
–0.4 V
–0.6 V
= 0 V
2.0
30
20
18
16
14
12
10
8
6
4
2
0
3