PTFB213004F V1 Infineon Technologies, PTFB213004F V1 Datasheet - Page 16

• Manufacturer Part Number: PTFB213004F V1
• Description: RF MOSFET Small Signal RFP-LDMOS 9
• Manufacturer: Infineon Technologies

Specifications of PTFB213004F V1

• Configuration: Single
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 10 V
• Continuous Drain Current: 2.4 A
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: H-37275-6
• Other names: FB213004FV1NP

PTFB213004F V2
Confidential, Limited Internal Distribution
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Edition 2010-12-09
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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please contact the nearest Infineon Technologies Office.
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Data Sheet
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Subjects (major changes since last revision)
Updated ESD protection feature
Corrected impedance icon
Corrected package in reference circuit
2010-10-04
2010-12-09
16 of 16
Rev. 05.2, 2010-12-09
Data Sheet