NE3511S02-T1C-A CEL, NE3511S02-T1C-A Datasheet - Page 2

• Manufacturer Part Number: NE3511S02-T1C-A
• Description: RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET
• Manufacturer: CEL

Specifications of NE3511S02-T1C-A

• Mounting Style: SMD/SMT
• Forward Transconductance Gfs (max / Min): 65 mS
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Power Dissipation: 165 mW
• Package / Case: SO-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RECOMMENDED OPERATING CONDITIONS (T
ELECTRICAL CHARACTERISTICS (T
2
Drain to Source Voltage
Drain Current
Input Power
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cutoff Voltage
Transconductance
Noise Figure
Associated Gain
Parameter
Parameter
Symbol
Symbol
V
I
V
I
GS (off)
NF
P
GSO
g
G
DSS
I
DS
D
m
in
a
A
V
V
V
V
V
Data Sheet PG10642EJ01V0DS
= +25°C, unless otherwise specified)
MIN.
GS
DS
DS
DS
DS
1
5
−
= 2 V, V
= 2 V, I
= 2 V, I
= 2 V, I
= −3 V
D
D
D
Test Conditions
TYP.
GS
A
= 100
= 10 mA
= 10 mA, f = 12 GHz
10
2
−
= +25°C)
= 0 V
µ
A
MAX.
20
3
0
dBm
Unit
mA
V
MIN.
−0.2
12.5
20
50
−
−
TYP.
−0.7
0.30
13.5
0.5
40
65
MAX.
−1.7
0.45
10
70
NE3511S02
−
−
Unit
mA
mS
µ
dB
dB
V
A