NE3511S02-T1C-A CEL, NE3511S02-T1C-A Datasheet

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NE3511S02-T1C-A

Manufacturer Part Number
NE3511S02-T1C-A
Description
RF GaAs SUPER Lo Noise PseudomorpHIc HJ FET
Manufacturer
CEL
Datasheet

Specifications of NE3511S02-T1C-A

Mounting Style
SMD/SMT
Forward Transconductance Gfs (max / Min)
65 mS
Gate-source Breakdown Voltage
- 3 V
Continuous Drain Current
10 mA
Power Dissipation
165 mW
Package / Case
SO-2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Document No. PG10642EJ01V0DS (1st edition)
Date Published October 2006 NS CP(N)
FEATURES
• Super low noise figure and high associated gain
• Micro-X plastic (S02) package
APPLICATIONS
• X to Ku-band DBS LNB
• Other X to Ku-band communication systems
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
NE3511S02-T1C
NE3511S02-T1D
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Remark To order evaluation samples, contact your nearby sales office.
Note Mounted on 1.08 cm
Part Number
NF = 0.30 dB TYP., G
Part number for sample order: NE3511S02-A
Parameter
NE3511S02-T1C-A
NE3511S02-T1D-A
X TO Ku BAND SUPER LOW NOISE AMPLIFIER
Order Number
a
2
= 13.5 dB TYP. @ f = 12 GHz
× 1.0 mm (t) glass epoxy PCB
HETERO JUNCTION FIELD EFFECT TRANSISTOR
Symbol
P
tot
S02 (Pb-Free)
V
V
T
T
I
I
DS
GS
D
G
stg
ch
Note
Package
A
N-CHANNEL HJ-FET
= +25°C)
−65 to +125
2 kpcs/reel
10 kpcs/reel
Ratings
Quantity
+125
I
100
165
−3
DSS
4
Marking
B
Unit
mW
mA
µ
°C
°C
V
V
A
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
NE3511S02
Supplying Form
2006

Related parts for NE3511S02-T1C-A

NE3511S02-T1C-A Summary of contents

Page 1

... APPLICATIONS • Ku-band DBS LNB • Other X to Ku-band communication systems ORDERING INFORMATION Part Number Order Number NE3511S02-T1C NE3511S02-T1C-A NE3511S02-T1D NE3511S02-T1D-A Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3511S02-A ABSOLUTE MAXIMUM RATINGS (T Parameter Drain to Source Voltage ...

Page 2

... Associated Gain +25°C) A MIN. TYP. MAX. Unit − − 0 dBm in = +25°C, unless otherwise specified) A Test Conditions = − µ 100 mA GHz Data Sheet PG10642EJ01V0DS NE3511S02 MIN. TYP. MAX. Unit µ − 0 −0.2 −0.7 −1.7 V − − 0.30 0.45 dB − 12.5 13.5 dB ...

Page 3

... DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 250 0 Drain to Source Voltage MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT 25 1 GHz = 1 1.2 1.0 15 0.8 10 0.6 0.4 5 0 Data Sheet PG10642EJ01V0DS NE3511S02 –0.2 V –0.4 V –0.6 V 1.0 2.0 ( min Drain Current I (mA ...

Page 4

... S-PARAMETERS S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/microwave/index.html 4 Data Sheet PG10642EJ01V0DS NE3511S02 ...

Page 5

... RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm) Reference Plane (Calibration Plane) φ 0.3 TH RT/duroid 5880/ROGERS t = 0.254 mm εr = 2.20 tan delta = 0.0009 @10 GHz 2.80 2.60 2.06 0.64 1.7 mm/R.P. 2.6 1.7 1.7 Reference Plane (Calibration Plane) L2–uX Ver. 1 6.0 Data Sheet PG10642EJ01V0DS NE3511S02 5 ...

Page 6

... PACKAGE DIMENSIONS S02 (UNIT: mm) (Top View) 3.2±0.2 0.65 TYP (Side View) 2.2±0.2 3.2±0.2 6 (Bottom View 1.7 PIN CONNECTIONS 1. Source 2. Drain 3. Source 4. Gate Data Sheet PG10642EJ01V0DS NE3511S02 2.2±0 ...

Page 7

... Caution Do not use different soldering methods together (except for partial heating). Soldering Conditions : 260°C or below : 10 seconds or less : 60 seconds or less : 120±30 seconds : 3 times : 0.2%(Wt.) or below : 350°C or below : 3 seconds or less : 0.2%(Wt.) or below Data Sheet PG10642EJ01V0DS NE3511S02 For soldering Condition Symbol IR260 HS350 7 ...

Page 8

... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 8 Data Sheet PG10642EJ01V0DS NE3511S02 M8E 02. 11-1 ...

Page 9

... Korea Branch Office TEL: +82-2-558-2120 NEC Electronics (Europe) GmbH http://www.eu.necel.com/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Compound Semiconductor Devices Division NEC Electronics Corporation URL: http://www.ncsd.necel.com/ FAX: +852-3107-7309 FAX: +886-2-2545-3859 FAX: +82-2-558-5209 NE3511S02 0604 ...

Page 10

... CAS numbers and other limited information may not be available for release event shall CEL’s liability arising out of such information exceed the total purchase price of the CEL part(s) at issue sold by CEL to customer on an annual basis. ...

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