NE46134-T1-QS-AZ CEL, NE46134-T1-QS-AZ Datasheet - Page 2

• Manufacturer Part Number: NE46134-T1-QS-AZ
• Description: RF Bipolar Power NPN High Frequency QS Rating
• Manufacturer: CEL

Specifications of NE46134-T1-QS-AZ

• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ABSOLUTE MAXIMUM RATINGS
Notes:
1. Operation in excess of any one of these parameters may result in
2. Chip mounted on an infinite heat sink (see AN-1001 for handling
3. Packaged device mounted on 0.7 mm x 2.5 cm
TYPICAL PERFORMANCE CURVES
SYMBOLS
permanent damage.
instructions).
ceramic substrate (copper plating).
V
V
V
T
P
T
CBO
CEO
EBO
STG
I
C
T
J
AVAILABLE GAIN vs. COLLECTOR CURRENT
INSERTION POWER GAIN AND MAXIMUM
100
10
80
60
40
20
8
2
6
4
0
0
COLLECTOR TO EMITTER VOLTAGE
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
NE46100
NE46134
Junction Temperature
NE46100
NE46134
Storage Temperature
NE46100
NE46134
0
0
Collector to Emitter Voltage, V
COLLLECTOR CURRENT vs.
PARAMETERS
I
Collector Current, Ic (mA)
B
V
= 0.6 mA
CE
2
3
NE46100, NE46134
= 10 V, f = 1 GHz
NE46134
50
10
100
0.5 mA
|S
0.3 mA
MAG
0.2 mA
0.1 mA
21
0.4 mA
UNITS
E
CE
mA
|
°C
°C
°C
°C
W
W
V
V
V
2
2
(V)
double sided
1
300
20
(T
-65 to +200
-65 to +150
RATINGS
A
(T
3.75
= 25°C)
250
200
150
2.0
30
15
3
A
=25°C)
NE46134
TYPICAL NOISE PARAMETERS
V
FREQ.
(GHz)
CC
0.5
= 10 V, I
3.75
NOISE FIGURE vs. COLLECTOR CURRENT
4.0
3.0
2.0
1.0
0.4
3
2
4
1
0
5
C
0
NF
(dB)
= 50 mA
1.5
5
0
OPT
NE46134
R
312.5˚C/W
WITH INFINITE
HEAT SINK
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
TH (J-A)
NE46134
R
32.5˚C/W
WITH INFINITE
HEAT SINK
Ambient Temperature, T
TH (J-C)
V
10
NE46100, NE46134
NE46100, NE46134
Collector Current, I
CE
(dB)
13.5
R
50
G
S
85
A
= 10 V, f = 1 GHz
= R
87.5
L
= 50 Ω Untuned
MAG
100
0.34
Γ Γ Γ Γ Γ
NE46100
R
30˚C/W
WITH INFINITE
HEAT SINK
TH (J-C)
OPT
C
ANG
(mA)
-176
150
A
(°C)
100
(T
A
200
RN/50
200
0.09
= 25°C)