PTFB191501E V1 Infineon Technologies
PTFB191501E V1
Manufacturer Part Number
PTFB191501E V1
Description
RF MOSFET Small Signal RFP-LDMOS 9
Manufacturer
Infineon Technologies
Specifications of PTFB191501E V1
Configuration
Single
Resistance Drain-source Rds (on)
0.08 Ohms
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
10 V
Continuous Drain Current
1.2 A
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Package / Case
H-36248-2
Other names
FB191501EV1XP