MRF8P8300HSR5 Freescale Semiconductor, MRF8P8300HSR5 Datasheet - Page 3

• Manufacturer Part Number: MRF8P8300HSR5
• Description: RF MOSFET Power HV8-800 28V NI1230HS
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P8300HSR5

• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Configuration: Single
• Package / Case: NI-1230S
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
P
IMD Symmetry @ 290 W PEP, P
VBW Resonance Point
Gain Flatness in 30 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(--30°C to +85°C)
(--30°C to +85°C)
@ 1 dB Compression Point, CW

30 dBc
Characteristic
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted) (continued)
= 96 W Avg.
DD
= 28 Vdc, I
Symbol
VBW
IMD
∆P1dB
P1dB
∆G
G
DQ
sym
F
res
= 2000 mA, 790--820 MHz Bandwidth
Min
—
—
—
—
—
—
MRF8P8300HR6 MRF8P8300HSR6
0.0185
0.0076
Typ
340
0.5
35
35
Max
—
—
—
—
—
—
dB/°C
dB/°C
MHz
MHz
Unit
dB
W
3