MRF8P8300HSR5 Freescale Semiconductor, MRF8P8300HSR5 Datasheet

RF MOSFET Power HV8-800 28V NI1230HS

MRF8P8300HSR5

Manufacturer Part Number
MRF8P8300HSR5
Description
RF MOSFET Power HV8-800 28V NI1230HS
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF8P8300HSR5

Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Configuration
Single
Package / Case
NI-1230S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© Freescale Semiconductor, Inc., 2011. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
from 790 to 820 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
• Typical Single--Carrier W--CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 805 MHz, 500 Watts CW
• Typical P
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
• Designed for Digital Predistortion Error Correction Systems
• Optimized for Doherty Applications
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W--CDMA and LTE base station applications with frequencies
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
2000 mA, P
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Output Power (3 dB Input Overdrive from Rated P
Enhanced Ruggedness
and Common Source S--Parameters
Operation
For R5 Tape and Reel option, see p. 14.
Case Temperature 80°C, 96 W CW, 28 Vdc, I
Case Temperature 85°C, 300 W CW, 28 Vdc, I
calculators by product.
Select Documentation/Application Notes -- AN1955.
Frequency
790 MHz
805 MHz
820 MHz
out
out
@ 1 dB Compression Point ≃ 340 Watts CW
= 96 Watts Avg., IQ Magnitude Clipping, Channel
Rating
(dB)
20.9
21.0
20.9
G
ps
Characteristic
(1,2)
35.2
35.5
35.7
(%)
η
D
DQ
DQ
= 2000 mA, 820 MHz
Symbol
Output PAR
= 2000 mA, 820 MHz
V
V
V
T
T
DSS
T
stg
GS
DD
C
J
(dB)
DD
6.2
6.2
6.1
out
= 28 Volts, I
), Designed for
--65 to +150
--0.5, +70
--6.0, +10
32, +0
Value
150
225
ACPR
(dBc)
--38.1
--38.1
--38.2
DQ
=
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Symbol
R
θJC
RF
RF
Document Number: MRF8P8300H
CASE 375D- -05, STYLE 1
CASE 375E- -04, STYLE 1
inA
inB
MRF8P8300HSR6
790- -820 MHz, 96 W AVG., 28 V
/V
/V
MRF8P8300HR6 MRF8P8300HSR6
MRF8P8300HR6
MRF8P8300HSR6
MRF8P8300HR6
GSA
GSB
Figure 1. Pin Connections
LATERAL N- -CHANNEL
RF POWER MOSFETs
NI- -1230S
NI- -1230
SINGLE W- -CDMA
3
4
Value
(Top View)
0.26
0.21
(2,3)
Rev. 0, 1/2011
1
2 RF
RF
outA
outB
°C/W
Unit
/V
/V
DSA
DSB
1

Related parts for MRF8P8300HSR5

MRF8P8300HSR5 Summary of contents

Page 1

... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2011. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, I ...

Page 2

... W Avg 820 MHz, out 20.0 20.9 23.5 34.5 35.7 — 5.9 6.1 — — --38.2 --36.5 dBc — --12 --9 = 2000 mA Avg., DQ out Output PAR ACPR IRL η D (%) (dB) (dBc) (dB) 35.2 6.2 --38.1 --11 35.5 6.2 --38.1 --12 35.7 6.1 --38.2 --12 (continued) RF Device Data Freescale Semiconductor ...

Page 3

... VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 30 MHz Bandwidth @ P Gain Variation over Temperature (--30°C to +85°C) Output Power Variation over Temperature (--30°C to +85°C) RF Device Data Freescale Semiconductor = 25°C unless otherwise noted) (continued) A Symbol = 28 Vdc P1dB ...

Page 4

... C44 C46 C51 C52 C50 C48* MRF8P8300H Rev. 2 C56 C58 C54 Part Number Manufacturer TDK ATC ATC ATC ATC ATC TDK ATC ATC ATC ATC Nichicon ATC ATC ATC ATC ATC ATC ATC TDK Multicomp Vishay Taconic RF Device Data Freescale Semiconductor ...

Page 5

... RF Device Data Freescale Semiconductor Devices are tested in a parallel configuration Single--ended λ λ Quadrature combined 4 4 λ λ λ λ Doherty 4 4 λ λ λ λ Push--pull Possible Circuit Topologies Figure 3. MRF8P8300HR6 MRF8P8300HSR6 5 ...

Page 6

... OUTPUT POWER (WATTS) out Figure 6. Output Peak- -to- -Average Ratio Compression (PARC) versus Output Power --30 0 --1 ps --32 --1.3 --4 --34 --1.6 --8 --36 --1.9 --12 --38 --2.2 --16 --40 --20 --2.5 870 890 100 -- --30 ACPR 44 --35 η --45 32 PARC --50 26 --55 20 160 190 RF Device Data Freescale Semiconductor ...

Page 7

... Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK--TO--AVERAGE (dB) Figure 9. CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 805 MHz 790 MHz 805 MHz 820 MHz 820 MHz Vdc 2000 mA, Single--Carrier DD DQ W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7 ...

Page 8

... Test circuit impedance as measured from source gate to ground, gate leads are tied together Test circuit impedance as measured from load drain to ground, drain leads are tied together. Device Input Under Matching Network Test Z Z source load Output Matching Network RF Device Data Freescale Semiconductor ...

Page 9

... NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V NOTE: Measurement made on a per side basis. RF Device Data Freescale Semiconductor = 28 Vdc 1000 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle DD DQA 790 MHz 806 MHz 822 MHz 25 26 ...

Page 10

... MRF8P8300HR6 MRF8P8300HSR6 10 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor MRF8P8300HR6 MRF8P8300HSR6 11 ...

Page 12

... MRF8P8300HR6 MRF8P8300HSR6 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF8P8300HR6 MRF8P8300HSR6 13 ...

Page 14

... The R5 tape and reel option for MRF8P8300H and MRF8P8300HS parts will be available for 2 years after release of MRF8P8300H and MRF8P8300HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8P8300H and MRF8P8300HS in the R6 tape and reel option ...

Page 15

... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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