MRF8S9102NR3 Freescale Semiconductor, MRF8S9102NR3 Datasheet - Page 3

• Manufacturer Part Number: MRF8S9102NR3
• Description: RF MOSFET Power HV8 900MHZ 50W OM780-2
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S9102NR3

• Transistor Polarity: N-Channel
• Configuration: Single
• Package / Case: OM-780-2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
Functional Tests
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) V
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Typical Performances (In Freescale Test Fixture, 50 ohm system) V
Typical Broadband Performance — 880 MHz (In Freescale Test Fixture, 50 ohm system) V
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
P
IMD Symmetry @ 82 W PEP, P
VBW Resonance Point
Gain Flatness in 40 MHz Bandwidth @ P
Gain Variation over Temperature
Output Power Variation over Temperature
1. Part internally matched both on input and output.
out
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and
Lower Sidebands > 2 dB)
(IMD Third Order Intermodulation Inflection Point)
(--30°C to +85°C)
(--30°C to +85°C)
@ 1 dB Compression Point, CW
(1)

(In Freescale Test Fixture, 50 ohm system) V
30 dBc
Frequency
Frequency
Characteristic
920 MHz
940 MHz
960 MHz
865 MHz
880 MHz
895 MHz
out
where IMD Third Order
(T
out
A
= 25°C unless otherwise noted) (continued)
= 28 W Avg.
DD
DD
= 28 Vdc, I
= 28 Vdc, I
VBW
IMD
∆P1dB
P1dB
(dB)
23.1
23.1
22.8
(dB)
22.9
23.0
22.8
G
G
G
∆G
ps
ps
Symbol
sym
F
ACPR
res
DD
DQ
PAR
G
IRL
η
ps
D
DQ
= 28 Vdc, I
= 750 mA, P
= 750 mA, 920--960 MHz Bandwidth
36.4
36.4
36.6
35.4
35.5
35.6
(%)
(%)
η
η
—
—
—
—
—
—
D
D
DD
21.5
34.0
Min
DQ
6.0
—
—
= 28 Vdc, I
out
= 750 mA, P
= 28 W Avg., f = 920 MHz,
Output PAR
Output PAR
0.004
(dB)
(dB)
0.02
100
6.3
6.2
6.1
0.3
6.4
6.2
6.0
20
80
--35.5
DQ
23.1
36.4
Typ
--14
6.3
out
= 750 mA, P
= 28 W Avg.,
ACPR
ACPR
(dBc)
(dBc)
--35.5
--36.1
--35.8
--34.7
--35.1
--35.7
--32.5
Max
24.0
—
—
—
—
—
—
--9
—
—
out
MRF8S9102NR3
= 28 W Avg.,
dB/°C
dB/°C
MHz
MHz
(dB)
(dB)
Unit
dBc
IRL
--14
--22
--17
IRL
--15
--23
--19
dB
dB
dB
dB
W
%
3