BLF6G27L-50BN,112 NXP Semiconductors, BLF6G27L-50BN,112 Datasheet - Page 11
![RF MOSFET Power Single 65V 0.25Ohms](/photos/27/8/270814/sot1112a_sml.jpg)
BLF6G27L-50BN,112
Manufacturer Part Number
BLF6G27L-50BN,112
Description
RF MOSFET Power Single 65V 0.25Ohms
Manufacturer
NXP Semiconductors
Datasheet
1.BLF6G27L-50BN112.pdf
(16 pages)
Specifications of BLF6G27L-50BN,112
Mounting Style
SMD/SMT
Resistance Drain-source Rds (on)
0.25 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Package / Case
SOT-1112A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NXP Semiconductors
Fig 16. Package outline SOT1112B
BLF6G27L-50BN_6G27LS-50BN
Product data sheet
Earless flanged ceramic package; 6 leads
Dimensions
inches
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
mm
Unit
SOT1112B
Outline
version
(1)
max
nom
max
nom
min
min
0.183
0.148
4.65
3.76
A
H
0.045
0.035
1.14
0.89
b
Z
0.207
0.197
5.26
5.00
IEC
b
A
1
0.007
0.004
0.18
0.10
c
4
6
b
L
9.65
9.40
0.38
0.37
D
JEDEC
9.65
9.40
0.38
0.37
All information provided in this document is subject to legal disclaimers.
D
1
D
U
b
9.65
9.40
0.38
0.37
References
D
3
1
2
1
1
1
E
0
Rev. 2 — 7 April 2011
9.65
9.40
0.38
0.37
E
1
JEITA
0.045
0.035
1.14
0.89
w
F
2
scale
D
5
5
7
17.12
16.10
0.674
0.634
D
H
Z
F
0.118
0.106
1
3.00
2.69
L
10 mm
0.067
0.057
1.70
1.45
Q
(2)
BLF6G27L(S)-50BN
9.91
9.65
0.39
0.38
U
1
9.91
9.65
0.39
0.38
U
2
U
2
0.51
0.02
European
projection
w
2
E
1
Power LDMOS transistor
0.235
0.225
5.97
5.72
Z
Q
11.20
10.95
0.441
0.431
Z
1
© NXP B.V. 2011. All rights reserved.
c
64
62
64
62
Issue date
09-10-12
10-02-02
E
sot1112b_po
SOT1112B
11 of 16