IXTF03N400 IXYS, IXTF03N400 Datasheet - Page 4

• Manufacturer Part Number: IXTF03N400
• Description: Various MOSFETs HI VOLTAGE MOSFET N-CHANNEL
• Manufacturer: IXYS

Specifications of IXTF03N400

• Forward Transconductance Gfs (max / Min): 0.18 S
• Gate Charge Qg: 16.3 nC
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Package / Case: ISOPLUS i4-Pac
• Resistance Drain-source Rds (on): 300 Ohms
• Drain-source Breakdown Voltage: 4000 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 300 mA
• Power Dissipation: 70 W
• Vdss, Max, (v): 4000
• Id(cont), Tc=25°c, (a): 0.3
• Rds(on), Max, Tj=25°c, (?): 300
• Ciss, Typ, (pf): 435
• Qg, Typ, (nc): 16.3
• Trr, Typ, (ns): 2.8
• Pd, (w): 70
• Rthjc, Max, (k/w): 1.78
• Package Style: ISOPLUS I4-PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1,000
900
800
700
600
500
400
300
200
100
100
350
300
250
200
150
100
10
50
0
1
0
0.0
2.0
0
f = 1 MHz
2.5
5
0.5
T
J
= 125ºC
3.0
Fig. 9. Forward Voltage Drop of
10
1.0
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
3.5
15
J
Intrinsic Diode
= 25ºC
T
1.5
J
V
= 125ºC
V
V
SD
- 40ºC
GS
DS
25ºC
4.0
- Volts
20
- Volts
- Volts
2.0
4.5
25
C iss
C oss
C rss
2.5
5.0
30
3.0
5.5
35
3.5
6.0
40
10.0
3.0
1.0
0.1
400
350
300
250
200
150
100
0.00001
10
50
9
8
7
6
5
4
3
2
1
0
0
0
0
V
I
I
Fig. 12. Maximum Transient Thermal Impedance
D
G
DS
Fig. 12. Maximum Transient Thermal Impedance
= 150mA
= 1mA
2
= 1000V
0.0001
50
4
100
0.001
Fig. 8. Transconductance
6
Fig. 10. Gate Charge
Pulse Width - Seconds
Q
G
I
D
- NanoCoulombs
- MilliAmperes
8
150
adad
0.01
10
IXTF03N400
200
0.1
12
T
J
250
= - 40ºC
14
IXYS REF: T_03N400(3P)10-27-09
125ºC
1
25ºC
16
300
10
18