IXTF03N400 IXYS, IXTF03N400 Datasheet

Various MOSFETs HI VOLTAGE MOSFET N-CHANNEL

IXTF03N400

Manufacturer Part Number
IXTF03N400
Description
Various MOSFETs HI VOLTAGE MOSFET N-CHANNEL
Manufacturer
IXYS
Datasheet

Specifications of IXTF03N400

Forward Transconductance Gfs (max / Min)
0.18 S
Gate Charge Qg
16.3 nC
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Package / Case
ISOPLUS i4-Pac
Resistance Drain-source Rds (on)
300 Ohms
Drain-source Breakdown Voltage
4000 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
300 mA
Power Dissipation
70 W
Vdss, Max, (v)
4000
Id(cont), Tc=25°c, (a)
0.3
Rds(on), Max, Tj=25°c, (?)
300
Ciss, Typ, (pf)
435
Qg, Typ, (nc)
16.3
Trr, Typ, (ns)
2.8
Pd, (w)
70
Rthjc, Max, (k/w)
1.78
Package Style
ISOPLUS I4-PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Voltage
Power MOSFET
( Electrically Isolated Tab)
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
P
T
T
T
T
T
F
V
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
1.6mm (0.062 in.) from case for 10s
Plastic Body for 10s
V
V
V
V
V
Mounting Force
50/60Hz, 1 Minute
Test Conditions
J
J
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 10V, I
GS
DSS
, I
D
, V
D
D
= 250μA
= 250μA
= 0.5 • I
GS
DS
= 0V
= 0V
D25
GS
Note 2, T
, Note 1
= 1MΩ
Advance Technical Information
J
= 125°C
JM
IXTF03N400
20..120 / 4.5..27
- 55 ... +150
- 55 ... +150
4000
Characteristic Values
Min.
2.0
Maximum Ratings
4000
4000
4000
±20
±30
300
800
150
300
260
70
Typ.
5
±100 nA
Max.
750 μA
300
4.0
10 μA
N/lb.
mA
mA
V~
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
V
V
g
V
I
R
ISOPLUS i4-Pak
1 = Gate
2 = Source
Features
Advantages
Applications
D25
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
4000V Electrical Isolation
Molding Epoxies meet UL 94 V-0
Flammability Classification
High Voltage Power Supplies
Capacitor Discharge
Pulse Circuits
Easy to Mount
Space Savings
High Power Density
DS(on)
DSS
1
2
5
≤ ≤ ≤ ≤ ≤
= 300mA
= 4000V
5 = Drain
TM
300Ω Ω Ω Ω Ω
Isolated Tab
DS100117A(11/09)

Related parts for IXTF03N400

IXTF03N400 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXTF03N400 Maximum Ratings 4000 = 1MΩ 4000 GS ±20 ±30 300 800 ... +150 150 - 55 ... +150 300 260 20..120 / 4.5..27 4000 5 Characteristic Values Min. Typ. 4000 2.0 Note 125° ...

Page 2

... I 1.9 D D25 8.8 0.15 Characteristic Values Min. Typ 200V 2.8 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTF03N400 ISOPLUS i4-Pak Max 1.78 °C/W °C/W Max. 300 mA 1.2 A 3.0 V μs 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...

Page 3

... Value vs. D 350 300 T = 125ºC J 250 200 150 100 T = 25º 400 500 600 IXTF03N400 Fig. 2. Extended Output Characteristics @ 10V 100 150 200 250 V - Volts DS Fig Normalized 150mA Value vs. DS(on) D Junction Temperature V = 10V ...

Page 4

... C iss 1.0 C oss C rss 0 0.00001 IXTF03N400 Fig. 8. Transconductance 0 50 100 150 200 I - MilliAmperes D Fig. 10. Gate Charge V = 1000V 150mA 1mA G Fig. 12. Maximum Transient Thermal Impedance NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance adad 0.0001 ...

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