BT152X-400R NXP Semiconductors, BT152X-400R Datasheet - Page 4

• Manufacturer Part Number: BT152X-400R
• Description: SCRs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT152X-400R

• Breakover Current Ibo Max: 220 A
• Rated Repetitive Off-state Voltage Vdrm: 450 V
• Off-state Leakage Current @ Vdrm Idrm: 1 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 1.5 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 32 mA
• Holding Current (ih Max): 60 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT152X-400R,127

Philips Semiconductors
October 1997
Thyristors
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
2.5
1.5
0.5
GT
3
2
1
0
3
2
1
0
3
2
1
0
-50
-50
-50
(T
IGT(25 C)
IL(25 C)
IH(25 C)
IGT(Tj)
IL(Tj)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BT152
BT145
BT152
Tj / C
Tj / C
Tj / C
50
50
50
100
100
100
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.12. Typical, critical rate of rise of off-state voltage,
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
10000
1000
50
40
30
20
10
0.001
100
0
0.01
10
0.1
0
10
10us
IT / A
1
0
Rs = 0.015 ohms
Tj = 125 C
dV
dVD/dt (V/us)
Vo = 1.12 V
Tj = 25 C
Zth j-hs (K/W)
with heatsink compound
without heatsink compound
D
/dt versus junction temperature T
0.1ms
0.5
pulse width t
1ms
50
tp / s
BT152
VT / V
BT152X
10ms
Tj / C
1
typ
P
D
p
BT152X series
.
0.1s
Product specification
100
t
p
1.5
RGK = 100 Ohms
gate open circuit
1s
th j-hs
max
t
, versus
Rev 1.100
j
.
10s
150
2