BT139B-800G /T3 NXP Semiconductors, BT139B-800G /T3 Datasheet - Page 6

• Manufacturer Part Number: BT139B-800G /T3
• Description: Triacs TAPE13 TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT139B-800G /T3

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 170 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 100 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.6 V @ 20 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-404
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT139B-800G,118

NXP Semiconductors
5. Thermal characteristics
Table 5.
BT139B-800G
Product data sheet
Symbol
R
R
Fig 6.
th(j-mb)
th(j-a)
Z
(K/W)
th(j-mb)
10
10
10
10
1
1
2
3
10
Transient thermal impedance from junction to mounting base as a function of pulse width
5
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
10
4
All information provided in this document is subject to legal disclaimers.
10
3
Rev. 05 — 22 March 2011
Conditions
half cycle; see
full cycle; see
minimum footprint; FR4 board
10
2
Figure 6
Figure 6
10
1
(1)
(2)
BT139B-800G
Min
-
-
-
P
D
1
Typ
-
-
55
t
p
t
p
© NXP B.V. 2011. All rights reserved.
(s)
001aab098
-
Max
1.7
1.2
t
10
4Q Triac
Unit
K/W
K/W
K/W
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