BT139B-800G /T3 NXP Semiconductors, BT139B-800G /T3 Datasheet - Page 3
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BT139B-800G /T3
Manufacturer Part Number
BT139B-800G /T3
Description
Triacs TAPE13 TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.BT139B-800G_T3.pdf
(14 pages)
Specifications of BT139B-800G /T3
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
170 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
100 mA
Holding Current (ih Max)
60 mA
Forward Voltage Drop
1.6 V @ 20 A
Mounting Style
SMD/SMT
Package / Case
SOT-404
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT139B-800G,118
NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BT139B-800G
Product data sheet
Symbol
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
GM
G(AV)
T
/dt
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state
current
I
rate of rise of on-state current
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 22 March 2011
Conditions
full sine wave; T
see
full sine wave; T
see
full sine wave; T
t
t
I
T2+ G+
I
T2+ G-
I
T2- G-
I
T2- G+
over any 20 ms period
p
p
T
T
T
T
= 16.7 ms
= 10 ms; sine-wave pulse
= 20 A; I
= 20 A; I
= 20 A; I
= 20 A; I
Figure
Figure
G
G
G
G
1; see
4; see
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
= 0.2 A; dI
j(init)
mb
j(init)
Figure
Figure 5
≤ 99 °C;
= 25 °C; t
= 25 °C;
G
G
G
G
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
/dt = 0.2 A/µs;
2; see
p
= 20 ms;
Figure 3
BT139B-800G
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-40
-
© NXP B.V. 2011. All rights reserved.
150
Max
800
16
155
170
120
50
50
50
10
2
5
5
0.5
125
4Q Triac
Unit
V
A
A
A
A
A/µs
A/µs
A/µs
A/µs
A
V
W
W
°C
°C
3 of 14
2
s