TS820-400B STMicroelectronics, TS820-400B Datasheet - Page 4

SCRs 8.0 Amp 400 Volt

TS820-400B

Manufacturer Part Number
TS820-400B
Description
SCRs 8.0 Amp 400 Volt
Manufacturer
STMicroelectronics
Datasheet

Specifications of TS820-400B

Breakover Current Ibo Max
73 A
Rated Repetitive Off-state Voltage Vdrm
400 V
Off-state Leakage Current @ Vdrm Idrm
5 uA
Forward Voltage Drop
1.6 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
8 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
TO-252
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Quantity
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Characteristics
4/12
Figure 3.
Figure 5.
Figure 7.
1.00
0.10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
-40
1E-2
I
0
I
GT H L
T(AV)
K=[Z
,I ,I [T ] /
I
Recommended pad layout,
FR4 printed circuit board
H
& I
-20
(A)
th(j-a)
L
I
GT
j
25
Average and DC on-state current
versus ambient temperature
(DPAK)
Relative variation of thermal
impedance junction to ambient
versus pulse duration (DPAK)
Relative variation of gate trigger
and holding current versus junction
temperature
= 180°
/R
1E-1
0
I
th(j-a)
GT H L
,I ,I [T =25°C]
D.C.
20
]
50
DPAK
1E+0
j
T
40
T (°C)
amb
t (s)
j
p
(°C)
TO-220AB / IPAK
60
Recommended pad layout,
FR4 printed circuit board
75
1E+1
80
TN8 and TYNx8
100
100
1E+2
Doc ID 7476 Rev 6
120
5E+2
125
140
TN805, TN815, TS820, TYN608, TYN808, TYN1008
Figure 4.
Figure 6.
Figure 8.
1.0
0.5
0.2
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
-40
1E-3
I [R
K=[Z
I
H
GT H L
TS8
,I ,I [T ] /
GK
th(j-c)
R
-20
GK
I
H
] / I [
& I
= 1k
I
GT
L
/R
H
j
Relative variation of thermal
impedance junction to case versus
pulse duration
Relative variation of gate trigger
current and holding current versus
junction temperature for TS820
Relative variation of holding
current versus gate-cathode
resistance (typical values)
R
th(j-c)
0
I
GK
GT H L
=1k ]
,I ,I [T =25°C]
]
1E-1
1E-2
20
j
R
40
T (°C)
GK
t (s)
j
p
(k )
60
1E+0
1E-1
80
100
T
j
= 25°C
120
1E+0
1E+1
140

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