TS820-400B STMicroelectronics, TS820-400B Datasheet - Page 3

• Manufacturer Part Number: TS820-400B
• Description: SCRs 8.0 Amp 400 Volt
• Manufacturer: STMicroelectronics

Specifications of TS820-400B

• Breakover Current Ibo Max: 73 A
• Rated Repetitive Off-state Voltage Vdrm: 400 V
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Forward Voltage Drop: 1.6 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 8 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TN805, TN815, TS820, TYN608, TYN808, TYN1008
Table 4.
Table 5.
1. S = Copper surface under tab
Figure 1.
8
7
6
5
4
3
2
1
0
Symbol
P(W)
0
dV/dt
Symbol
I
I
V
V
V
DRM
RRM
R
R
I
V
R
GT
I
I
GD
GT
TM
H
L
th(j-a)
t0
th(j-c)
= 180°
d
1
V
V
I
I
V
I
Threshold voltage
Dynamic resistance
V
T
G
TM
D
D
D
DRM
Standard electrical characteristics (T
Thermal resistance
= 100 mA , gate open
Maximum average power
dissipation versus average on-state
current
= 1.2 I
Junction to case (DC)
Junction to ambient (DC)
= 12 V, R
= V
= 67% V
= 16 A
= V
DRM,
2
GT
RRM
R
L
DRM,
I
T(AV)
t
L
p
= 33
= 3.3 k
= 380 µs
3
(A)
gate open
Test conditions
4
5
T
T
T
T
T
T
T
Doc ID 7476 Rev 6
360°
j
j
j
j
j
j
j
Parameter
= 125 °C
=125 °C
= 25 °C
= 125 °C
= 125 °C
= 25 °C
= 125 °C
S
6
(1)
j
Figure 2.
10.0
= 25 °C, unless otherwise specified)
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
= 0.5 cm
0
I
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
MAX.
T(AV)
MIN.
MIN.
MIN.
(A)
2
DPAK
IPAK
TO-220AB
Average and DC on-state current
versus case temperature
25
TN805
0.5
25
30
50
5
50
TN815
= 180°
D.C.
T
150
0.85
case
15
40
50
1.3
0.2
1.6
46
2
5
2
(°C)
75
TYNx08
150
15
30
70
Characteristics
2
Value
100
1.3
70
60
100
V/µs
Unit
m
mA
mA
mA
mA
µA
°C/W
°C/W
Unit
V
V
V
V
3/12
125