BT168G NXP Semiconductors, BT168G Datasheet - Page 8

• Manufacturer Part Number: BT168G
• Description: SCRs BULK MOSFET
• Manufacturer: NXP Semiconductors

Specifications of BT168G

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.7 V
• Gate Trigger Voltage (vgt): 0.8 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT168G,112

Philips Semiconductors
7. Package information
9397 750 13511
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H(Tj)
3
2
1
0
R
junction temperature.
50
GK
= 1 k .
0
Epoxy meets requirements of UL94 V-0 at
50
100
001aab504
T
j
( C)
150
Rev. 04 — 20 August 2004
Thyristors logic level for RCD/GFI/LCCB applications
Fig 12. Critical rate of rise of off-state voltage as a
dV
(V/ s)
(1) R
(2) Gate open circuit.
D
10
10
10
/dt
10
4
3
2
function of junction temperature; typical
values.
1
0
GK
8
inch.
= 1 k .
50
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT168 series
(1)
(2)
100
T
j
001aab507
( C)
150
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