BT169B AMO NXP Semiconductors, BT169B AMO Datasheet - Page 3

• Manufacturer Part Number: BT169B AMO
• Description: SCRs AMMORA SCR
• Manufacturer: NXP Semiconductors

Specifications of BT169B AMO

• Breakover Current Ibo Max: 9 A
• Rated Repetitive Off-state Voltage Vdrm: 200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Forward Voltage Drop: 1.35 V
• Gate Trigger Voltage (vgt): 0.8 V
• Gate Trigger Current (igt): 0.2 mA
• Holding Current (ih Max): 5 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT169B,126

Philips Semiconductors
9397 750 13512
Product data sheet
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
I
P
(W)
TSM
(A)
tot
0.8
0.6
0.4
0.2
10
0
8
6
4
2
0
a = form factor = I
f = 50 Hz.
values.
0
1
T(RMS)
0.1
/I
T(AV)
.
4
0.2
10
Rev. 04 — 23 August 2004
2.8
0.3
2.2
10
0.4
2
conduction
(degrees)
1.9
angle
120
180
30
60
90
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
factor
form
1.57
2.8
2.2
1.9
a
4
BT169 series
0.5
T
I
n
T
j
initial = 25 C max
a =
1.57
Thyristors logic level
t
I
p
T(AV)
001aab446
001aab499
(A)
I
TSM
t
10
0.6
3
77
89
101
113
125
T
( C)
c(max)
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