BTA312Y-600C NXP Semiconductors, BTA312Y-600C Datasheet - Page 6

• Manufacturer Part Number: BTA312Y-600C
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA312Y-600C

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 110 A
• Off-state Leakage Current @ Vdrm Idrm: 35 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 35 mA
• Holding Current (ih Max): 35 mA
• Forward Voltage Drop: 1.6 V @ 15 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA312Y-600C,127

NXP Semiconductors
7. Static characteristics
Table 6.
T
BTA312Y_SER_C_1
Product data sheet
Symbol Parameter
I
I
I
V
V
I
GT
L
H
D
j
T
GT
= 25 C unless otherwise specified.
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
Static characteristics
Conditions
V
V
V
I
V
V
V
T
D
D
D
D
D
D
T2+ G+
T2+ G
T2 G
T2+ G+
T2+ G
T2 G
= 15 A; see
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
DRM(max)
T
GT
GT
T
Rev. 01 — 27 September 2007
T
= 0.1 A; see
= 0.1 A; see
Figure 9
= 0.1 A; see
= 0.1 A; see
= 0.1 A; T
; T
j
= 125 C
12 A Three-quadrant triacs high commutation insulated
j
= 125 C
Figure 8
Figure 7
Figure 10
Figure 11
BTA312Y series C
Min
2
2
2
-
-
-
-
-
-
0.25
-
Typ
-
-
-
-
-
-
-
1.3
0.8
0.4
0.1
© NXP B.V. 2007. All rights reserved.
Max
35
35
35
50
60
50
35
1.6
1.5
-
0.5
6 of 12
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA