BT139X-600G NXP Semiconductors, BT139X-600G Datasheet - Page 7

• Manufacturer Part Number: BT139X-600G
• Description: Triacs RAIL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of BT139X-600G

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 170 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 100 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.6 V @ 20 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-186A
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT139X-600G,127

Philips Semiconductors
7. Dynamic characteristics
Table 7:
9397 750 14038
Product data sheet
Symbol
dV
dV
t
gt
Fig 7. Normalized gate trigger voltage as a function of
V
D
com
V
GT(25 C)
/dt
GT(Tj)
/dt critical rate of
1.6
1.2
0.8
0.4
junction temperature
50
Parameter
critical rate of
rise of off-state
voltage
change of
commutating
voltage
gate controlled
turn-on time
Dynamic characteristics
0
Conditions
V
T
exponential waveform;
gate open circuit
V
T
I
dI
gate open circuit;
Figure 12
I
V
I
dI
T(RMS)
TM
G
j
j
DM
DM
D
com
G
50
= 125 C;
= 95 C;
= 0.1 A;
/dt = 5 A/ s
= V
= 20 A;
= 67 % V
= 400 V;
/dt = 7.2 A/ms;
DRM(max)
= 16 A;
100
DRM(max)
;
001aab101
T
j
( C)
Rev. 05 — 20 January 2005
150
;
200
10
-
Min Typ
BT139X
250
20
2
Fig 8. Normalized gate trigger current as a function of
I
GT(25 C)
I
GT(Tj)
(1) T2+ G+.
(2) T2+ G .
(3) T2 G .
(4) T2 G+.
-
-
-
Max
3
2
1
0
junction temperature
50
50
-
-
Min Typ
BT139X-F
0
250
20
2
(1)
(2)
(3)
(4)
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
BT139X series
-
-
-
Max
50
200
10
-
Min Typ
100
BT139X-G
250
20
2
001aab089
T
j
( C)
-
-
-
150
Max
Triacs
7 of 12
Unit
V/ s
V/ s
s