BTA416Y-600B NXP Semiconductors, BTA416Y-600B Datasheet - Page 8

• Manufacturer Part Number: BTA416Y-600B
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA416Y-600B

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 176 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.5 V @ 20 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA416Y-600B,127

NXP Semiconductors
BTA416Y-600B
Product data sheet
Fig 7.
Fig 9.
I
GT(25 C)
I
H(25 C)
I
GT
I
H
3
2
1
0
3
2
1
0
junction temperature
junction temperature
Normalized gate trigger current as a function of
Normalized holding current as a function of
50
50
(1)
(2)
(3)
0
0
50
50
100
100
All information provided in this document is subject to legal disclaimers.
001aag165
001aag167
T
T
j
j
( C)
( C)
150
150
Rev. 3 — 27 June 2011
Fig 8.
Fig 10. On-state current as a function of on-state
I
L(25 C)
I
L
(A)
I
T
50
40
30
20
10
3
2
1
0
0
junction temperature
voltage
Normalized latching current as a function of
50
0
0.5
0
BTA416Y-600B
50
1
(1)
(2)
100
1.5
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
(3)
003aab822
001aag166
T
j
V
( C)
T
(V)
150
2
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