BTA416Y-600B NXP Semiconductors, BTA416Y-600B Datasheet - Page 7

Triacs RAIL-THYR AND TRIACS

BTA416Y-600B

Manufacturer Part Number
BTA416Y-600B
Description
Triacs RAIL-THYR AND TRIACS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BTA416Y-600B

Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
176 A
Off-state Leakage Current @ Vdrm Idrm
2 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
50 mA
Holding Current (ih Max)
60 mA
Forward Voltage Drop
1.5 V @ 20 A
Mounting Style
Through Hole
Package / Case
TO-220
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTA416Y-600B,127

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BTA416Y-600B
Manufacturer:
NXP
Quantity:
80 000
Part Number:
BTA416Y-600B
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BTA416Y-600B127
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
7. Characteristics
Table 7.
BTA416Y-600B
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dI
t
GT
L
H
D
gt
T
GT
com
D
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
gate-controlled turn-on time
All information provided in this document is subject to legal disclaimers.
Conditions
V
see
V
see
V
see
V
see
V
see
V
see
V
I
V
see
V
V
V
V
waveform; gate open circuit
V
waveform; gate open circuit
V
dV
condition); gate open circuit
V
dV
condition); gate open circuit
I
dI
T
TM
D
D
D
D
D
D
D
D
D
D
D
DM
DM
D
D
G
= 20 A; T
com
com
/dt = 5 A/µs
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; T
= 12 V; I
= 400 V; I
= 600 V; T
= 600 V; T
= 400 V; T
= 400 V; T
= 20 A; V
Figure 7
Figure 7
Figure 7
Figure 8
Figure 8
Figure 8
Figure 11
= 402 V; T
= 402 V; T
/dt = 20 V/µs; (without snubber
/dt = 20 V/µs; (without snubber
Rev. 3 — 27 June 2011
j
T
T
T
G
G
G
T
j
= 25 °C; see
T
D
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
= 25 °C; see
= 0.1 A; T
= 0.1 A; T2+ G+; T
= 0.1 A; T2+ G-; T
= 0.1 A; T2- G-; T
j
j
j
j
= 0.1 A; T
= 125 °C
= 150 °C
= 125 °C; I
= 150 °C; I
= 600 V; I
j
j
= 125 °C; exponential
= 150 °C; exponential
j
= 25 °C;
j
G
= 150 °C
T(RMS)
T(RMS)
Figure 10
= 100 mA;
Figure 9
j
j
j
j
= 25 °C;
= 16 A;
= 16 A;
j
= 25 °C;
j
= 25 °C;
= 25 °C;
= 25 °C;
= 25 °C;
BTA416Y-600B
Min
2
2
2
-
-
-
-
-
-
0.25
-
-
1000
600
15
6
-
Typ
-
-
-
-
-
-
-
1.2
0.7
0.4
0.1
0.4
-
-
-
-
2
© NXP B.V. 2011. All rights reserved.
3Q Hi-Com Triac
Max
50
50
50
60
90
60
60
1.5
1.5
-
0.5
2
-
-
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
mA
V/µs
V/µs
A/ms
A/ms
µs
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