T410-800W STMicroelectronics, T410-800W Datasheet - Page 5

• Manufacturer Part Number: T410-800W
• Description: Triacs 4A Triacs
• Manufacturer: STMicroelectronics

Specifications of T410-800W

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 31 A
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.56 V @ 5.5 A
• Mounting Style: Through Hole
• Package / Case: ISOWATT220AB
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 7: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
and corresponding value of I
Figure 9: Relative variation of critical rate of
decrease of main current versus (dV/dt)c
(typical values)
Figure 11: DPAK thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm)
100
500
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
90
80
70
60
50
40
30
20
10
10
0
1
0.01
0.1
0
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
R
I
TSM
th(j-a)
dI/dt limitation:
(A), I t (A s)
50A/µs
4
(°C/W)
2
8
2
12
0.10
1.0
(dV/dt)c (V/µs)
16
t (ms)
S(cm²)
p
20
2
t
24
T405
10.0
1.00
28
32
T initial=25°C
I t
j
T435
p
2
T410
I
< 10 ms
TSM
36
10.00
100.0
40
Figure 8: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
Figure 10: Relative variation of critical rate of
decrease of main current versus junction
temperature
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
0
0
(dI/dt)c [T ] /
-40
I
GT H L
I
H
,I ,I [T ] /
& I
L
-20
j
25
j
I
GT
(dI/dt)c [T s
0
I
GT H L
,I ,I [T =25°C]
20
j
50
j
pecified]
40
T (°C)
T (°C)
j
j
60
75
80
100
100
T4 Series
120
5/10
125
140