T410-800W STMicroelectronics, T410-800W Datasheet - Page 4

• Manufacturer Part Number: T410-800W
• Description: Triacs 4A Triacs
• Manufacturer: STMicroelectronics

Specifications of T410-800W

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 31 A
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.56 V @ 5.5 A
• Mounting Style: Through Hole
• Package / Case: ISOWATT220AB
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

T4 Series
Figure 1: Maximum power dissipation versus
RMS on-state current (full cycle)
Figure 3: RMS on-state current versus ambient
temperature (printed circuit board FR4, copper
thickness: 35µm) (full cycle)
Figure 5: On-state characteristics (maximum
values)
4/10
30.0
10.0
6
5
4
3
2
1
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.0
0.1
P(W)
I
0
0.0
T(RMS)
I
TM
R = 120 m
V = 0.90V
d
to
0.5
(A)
T max.
T =
j
j
0.5
(A)
T max.
j
Ω
25
1.0
1.0
1.5
T = 25°C
1.5
j
50
2.0
I
.
T(RMS)
T (°C)
C
V
2.0
TM
2.5
(A)
(V)
75
3.0
2.5
3.5
3.0
100
4.0
(S=0.5CM )
3.5
DPAK
4.5
2
125
4.0
5.0
Figure 2: RMS on-state current versus case
temperature (full cycle)
Figure 4: Relative variation of thermal
impedance versus pulse duration
Figure 6: Surge peak on-state current versus
number of cycles
1E+0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
35
30
25
20
15
10
1E-2
1E-1
0
5
1
I
0
I
TSM
T(RMS)
1E-2
K=[Z /R
TO-220AB / DPAK / IPAK
(A)
th
(A)
Repetitive
T =110°C
C
25
th
1E-1
R
]
th(j-c)
10
ISOWATT220AB
Number of cycles
Non repetitive
T initial=25°C
50
j
1E+0
T (°C)
C
DPAK / IPAK
t (s)
p
TO-220AB / DPAK / IPAK
75
1E+1
100
ISOWATT220AB
TO-220AB / ISOWATT220AB
R
th(j-a)
100
t=20ms
1E+2
One cycle
5E+2
1000
125