BTA201W-800E T/R NXP Semiconductors, BTA201W-800E T/R Datasheet - Page 7

• Manufacturer Part Number: BTA201W-800E T/R
• Description: Triacs THYR AND TRIACS TAPE 8
• Manufacturer: NXP Semiconductors

Specifications of BTA201W-800E T/R

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 12 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA201W-800E,115

NXP Semiconductors
7. Dynamic characteristics
Table 6.
BTA201W_SER_3
Product data sheet
Symbol
BTA201W-600E and BTA201W-800E
dV
dI
t
gt
Fig 7.
com
V
D
GT(25 C)
/dt
V
/dt
GT
1.6
1.2
0.8
0.4
50
Normalized gate trigger voltage as a function
of junction temperature
Dynamic characteristics
Parameter
rate of rise of off-state
voltage
rate of change of
commutating current
gate-controlled turn-on
time
0
50
Conditions
V
exponential waveform; gate open circuit
V
gate open circuit
I
dI
TM
DM
DM
100
G
dV
dV
/dt = 5 A/ s
= 20 A; V
= 0.67V
= 400 V; T
com
com
001aab101
T
j
( C)
/dt = 20 V/ s
/dt = 10 V/ s
150
Rev. 03 — 13 March 2008
DRM(max)
D
= V
j
= 125 C; I
DRM(max)
; T
j
= 125 C;
Fig 8.
; I
I
T(RMS)
GT(25 C)
G
I
GT
(1) T2 G
(2) T2+ G
(3) T2+ G+
= 0.1 A;
2
1
3
0
1 A Three-quadrant triacs high commutation
= 4 A;
50
Normalized gate trigger current as a function
of junction temperature
(1)
(2)
(3)
BTA201W series E
0
Min
600
2.5
3.5
-
50
-
-
Typ
-
2
100
© NXP B.V. 2008. All rights reserved.
Max
-
-
-
-
003aaa959
T
j
( C)
(3)
(2)
(1)
150
Unit
V/ s
A/ms
A/ms
s
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