BTA412Y-800C NXP Semiconductors, BTA412Y-800C Datasheet - Page 7

• Manufacturer Part Number: BTA412Y-800C
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA412Y-800C

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 153 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 35 mA
• Holding Current (ih Max): 35 mA
• Forward Voltage Drop: 1.5 V @ 18 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA412Y-800C,127

NXP Semiconductors
8. Dynamic characteristics
Table 7.
BTA412Y_SER_B_C_2
Product data sheet
Symbol Parameter
dV
dI
t
gt
Fig 7.
com
V
D
GT(25 C)
/dt
V
/dt rate of change
GT
1.6
1.2
0.8
0.4
rate of rise of
off-state voltage
of commutating
current
gate-controlled
turn-on time
50
Normalized gate trigger voltage as a function
of junction temperature
Dynamic characteristics
0
Conditions
V
waveform; gate open circuit
V
snubber; gate open circuit
I
dI
TM
DM
DM
G
50
T
T
T
T
/dt = 5 A/ s
j
j
j
j
= 20 A; V
= 125 C
= 150 C
= 125 C
= 150 C
= 0.67
= 400 V; I
100
12 A 3-quadrant triacs, insulated, high commutation, high temperature
D
V
T(RMS)
= V
DRM(max)
001aag168
T
j
( C)
DRM(max)
= 12 A; without
150
Rev. 02 — 11 March 2008
; exponential
; I
G
= 0.1 A;
Fig 8.
I
GT(25 C)
BTA412Y series B and C
I
GT
(1) T2 G
(2) T2+ G
(3) T2+ G+
3
2
1
0
50
Normalized gate trigger current as a function
of junction temperature
(1)
(2)
(3)
BTA412Y-600B
BTA412Y-800B
Min
1000
600
20
8
-
Typ
-
-
-
-
2
0
Max Min
-
-
-
-
-
50
BTA412Y-600C
BTA412Y-800C
500
300
15
6
-
100
Typ
-
-
-
-
2
© NXP B.V. 2008. All rights reserved.
001aag165
T
j
( C)
Max
-
-
-
-
-
150
Unit
V/ s
V/ s
A/ms
A/ms
7 of 12
s