BTA412Y-800C NXP Semiconductors, BTA412Y-800C Datasheet - Page 6

• Manufacturer Part Number: BTA412Y-800C
• Description: Triacs RAIL-THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA412Y-800C

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 153 A
• Off-state Leakage Current @ Vdrm Idrm: 2 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 35 mA
• Holding Current (ih Max): 35 mA
• Forward Voltage Drop: 1.5 V @ 18 A
• Mounting Style: Through Hole
• Package / Case: TO-220
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA412Y-800C,127

NXP Semiconductors
7. Static characteristics
Table 6.
T
BTA412Y_SER_B_C_2
Product data sheet
Symbol Parameter
I
I
I
V
V
I
GT
L
H
D
j
T
GT
= 25 C unless otherwise specified.
gate trigger
current
latching current V
holding current
on-state
voltage
gate trigger
voltage
off-state current V
Static characteristics
Conditions
V
V
I
V
V
V
T
D
D
D
D
D
D
D
T2+ G+
T2+ G
T2 G
T2+ G+
T2+ G
T2 G
= 18 A; see
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= V
DRM(max)
DRM(max)
T
G
G
T
12 A 3-quadrant triacs, insulated, high commutation, high temperature
T
= 0.1 A; see
= 0.1 A; see
= 0.1 A; see
= 0.1 A; see
Figure 9
= 0.1 A; T
; T
; T
j
j
= 125 C
= 150 C
Rev. 02 — 11 March 2008
j
= 150 C
Figure 8
Figure 7
Figure 10
Figure 11
BTA412Y series B and C
BTA412Y-600B
BTA412Y-800B
Min
2
2
2
-
-
-
-
-
-
0.25
-
-
Typ
-
-
-
-
-
-
-
1.3
0.8
0.4
0.1
0.4
Max
50
50
50
60
90
60
60
1.5
1.5
-
0.5
2
BTA412Y-600C
BTA412Y-800C
Min
2
2
2
-
-
-
-
-
-
0.25
-
-
Typ
-
-
-
-
-
-
-
1.3
0.8
0.4
0.1
0.4
© NXP B.V. 2008. All rights reserved.
Max
35
35
35
50
60
50
35
1.5
1.5
-
0.5
2
6 of 12
Unit
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
mA