BAV99W,115 NXP Semiconductors, BAV99W,115 Datasheet - Page 4

• Manufacturer Part Number: BAV99W,115
• Description: DIODE SW DBL 75V 150MA HS SOT323
• Manufacturer: NXP Semiconductors

Specifications of BAV99W,115

• Package / Case: SC-70-3, SOT-323-3
• Voltage - Forward (vf) (max) @ If: 1.25V @ 150mA
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Current - Average Rectified (io) (per Diode): 130mA (DC)
• Voltage - Dc Reverse (vr) (max): 100V
• Reverse Recovery Time (trr): 4ns
• Diode Type: Standard
• Speed: Small Signal =< 200mA (Io), Any Speed
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 0.15 A
• Max Surge Current: 4 A
• Configuration: Dual Series
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 1 uA
• Operating Temperature Range: + 150 C
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1625-2; 934026010115; BAV99W T/R

Philips Semiconductors
GRAPHICAL DATA
1999 May 11
handbook, full pagewidth
High-speed double diode
Device mounted on an FR4 printed-circuit board.
Fig.2
Based on square wave currents.
T
j
= 25 C prior to surge.
(mA)
I FSM
I F
(A)
10
200
100
10
10
0
1
2
1
0
Maximum permissible continuous forward
current as a function of ambient
temperature.
1
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
single diode loaded
double diode loaded
100
10
T
amb
( C)
o
MGA889
200
4
10
2
handbook, halfpage
(1) T
(2) T
(3) T
Fig.3
(mA)
300
200
100
I F
j
j
j
= 150 C; typical values.
= 25 C; typical values.
= 25 C; maximum values.
0
0
Forward current as a function of forward
voltage.
10
3
(1)
1
(2)
t p ( s)
Product specification
V F (V)
(3)
BAV99W
MBG382
MBG704
10
2
4