BT131-800 T/R NXP Semiconductors, BT131-800 T/R Datasheet - Page 6

• Manufacturer Part Number: BT131-800 T/R
• Description: Triacs THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BT131-800 T/R

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 13.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 7 mA
• Holding Current (ih Max): 5 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT131-800,116

Philips Semiconductors
6. Characteristics
Table 5:
T
BT131_SER_8
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
Dynamic characteristics
dV
dV
t
GT
L
H
D
gt
j
T
GT
= 25 C unless otherwise stated.
D
com
/dt
/dt
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
rate of rise of off-state
voltage
rate of change of
commutating current
gate-controlled
turn-on time
Conditions
V
Figure 8
V
Figure 10
V
Figure 11
I
I
see
V
V
exponential waveform; R
see
V
dI
I
I
T
T
TM
G
D
D
D
D
DM
DM
com
T2+ G+
T2+ G
T2 G
T2 G+
T2+ G+
T2+ G
T2 G
T2 G+
= 1.4 A; see
= 10 mA; gate open circuit;
V
V
T
= 100 mA; dI
= 12 V; I
= 12 V; I
= 12 V; I
= V
j
D
D
= 1.5 A; V
Figure 7
Figure 12
= 125 C
= 67 % V
= 400 V; T
/dt = 0.5 A/ms
= 12 V; I
= 400 V; I
DRM(max)
Rev. 08 — 9 September 2005
T
GT
GT
= 100 mA; see
D
GT
DRM(max)
= 100 mA; see
= 100 mA; see
; T
Figure 9
j
GT
= V
G
= 125 C;
/dt = 5 A/ s
= 100 mA
j
= 100 mA;
= 125 C
DRM(max)
; T
GK
j
= 125 C;
;
= 1 k ;
Min
-
-
-
-
-
-
-
-
-
-
-
0.2
-
10
2
-
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
BT131 series
Typ
0.4
1.3
1.4
3.8
1.2
4
1
2.5
1.3
1.2
0.7
0.3
0.1
20
-
2
Triacs logic level
Max
3
3
3
7
5
8
5
8
5
1.5
1.5
-
0.5
-
-
-
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
mA
V/ s
V/ s
s
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