BT131-800 T/R NXP Semiconductors, BT131-800 T/R Datasheet - Page 10

• Manufacturer Part Number: BT131-800 T/R
• Description: Triacs THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BT131-800 T/R

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 13.8 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 7 mA
• Holding Current (ih Max): 5 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BT131-800,116

Philips Semiconductors
9. Revision history
Table 6:
BT131_SER_8
Product data sheet
Document ID
BT131_SER_8
Modifications:
BT131_SER_7
BT131_SER_6
BT131_SER_5
BT131_SER_4
BT131_SER_3
Revision history
Release date
20050909
20040101
20030801
20001201
20000501
19980401
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•
The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
Figure
5: corrected
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Product specification
Product specification
Rev. 08 — 9 September 2005
Change notice
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Doc. number
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© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
BT131 series
Supersedes
BT131_SER_7
BT131_SER_6
BT131_SER_5
BT131_SER_4
BT131_SER_3
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Triacs logic level
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