BTA225-600BT NXP Semiconductors, BTA225-600BT Datasheet - Page 7

• Manufacturer Part Number: BTA225-600BT
• Description: Triacs THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA225-600BT

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 209 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.55 V @ 30 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA225-600BT,127

Philips Semiconductors
9397 750 14379
Product data sheet
Fig 7. Normalized gate trigger voltage as a function of
Fig 9. On-state current characteristics
V
V
GT(25 C)
GT(Tj)
(1) T
(2) T
(3) T
(A)
I
T
1.6
1.2
0.8
0.4
80
60
40
20
0
junction temperature
V
R
50
0
j
j
j
O
S
= 150 C; typical values
= 150 C; maximum values
= 25 C; maximum values
= 0.015
= 1.073 V
0
(1)
1
(2)
(3)
50
2
100
V
T
T
001aac225
001aac227
(V)
j
( C)
150
3
Rev. 01 — 3 March 2005
Fig 8. Normalized gate trigger current as a function of
Fig 10. Normalized latching current as a function of
I
I
GT(25 C)
L(25 C)
I
I
GT(Tj)
L(Tj)
(1) T2 G
(2) T2+ G
(3) T2+ G+
3
2
1
0
3
2
1
0
junction temperature
junction temperature
50
50
Three quadrant triacs high commutation
(1)
(2)
(3)
0
0
BTA225-600BT
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
50
50
100
100
T
T
001aac226
001aac228
j
j
( C)
( C)
150
150
7 of 12