BTA225-600BT NXP Semiconductors, BTA225-600BT Datasheet - Page 4

• Manufacturer Part Number: BTA225-600BT
• Description: Triacs THYR AND TRIACS
• Manufacturer: NXP Semiconductors

Specifications of BTA225-600BT

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 209 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.55 V @ 30 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-78
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA225-600BT,127

Philips Semiconductors
9397 750 14379
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse width (t
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
I
(A)
TSM
(A)
10
10
10
80
60
40
20
3
2
10
0
t
values
10
f = 50 Hz; T
duration for sinusoidal currents
p
-2
5
20 ms
dl
T
mb
/dt limit
10
116 C
-1
10
surge duration (s)
1
4
003aaa805
10
Rev. 01 — 3 March 2005
10
3
Fig 5. RMS on-state current as a function of mounting
I
T(RMS)
(A)
30
20
10
0
base temperature; maximum values
50
Three quadrant triacs high commutation
0
p
) for sinusoidal currents; maximum
10
50
2
BTA225-600BT
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
100
T
I
T
j
initial = 25 C max
t
116 C
p
(s)
t
p
150
T
003aaa796
001aac223
mb
I
TSM
( C)
time
10
200
1
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