BT149G AMO NXP Semiconductors, BT149G AMO Datasheet - Page 8
![SCRs AMMORA SCR](/photos/16/4/160465/to3_sml.jpg)
BT149G AMO
Manufacturer Part Number
BT149G AMO
Description
SCRs AMMORA SCR
Manufacturer
NXP Semiconductors
Datasheet
1.BT149G_AMO.pdf
(12 pages)
Specifications of BT149G AMO
Breakover Current Ibo Max
9 A
Rated Repetitive Off-state Voltage Vdrm
600 V
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Forward Voltage Drop
1.7 V
Gate Trigger Voltage (vgt)
0.8 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
0.2 mA
Holding Current (ih Max)
5 mA
Mounting Style
SMD/SMT
Package / Case
SOT-54
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BT149G,126
Philips Semiconductors
7. Package information
9397 750 13508
Product data sheet
Fig 11. Normalized holding current as a function of
I
H(25 C)
I
H(Tj)
3
2
1
0
R
junction temperature.
50
GK
= 1 k .
0
Epoxy meets requirements of UL94 V-0 at
50
100
001aab504
T
j
( C)
150
Rev. 04 — 20 August 2004
Fig 12. Critical rate of rise of off-state voltage as a
dV
(V/ s)
(1) R
(2) Gate open circuit.
D
10
10
10
/dt
10
4
3
2
function of junction temperature; typical
values.
1
0
GK
8
inch.
= 1 k .
50
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
BT149 series
(1)
(2)
100
Thyristors logic level
T
j
001aab507
( C)
150
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