BTA201W-600E T/R NXP Semiconductors, BTA201W-600E T/R Datasheet - Page 3

• Manufacturer Part Number: BTA201W-600E T/R
• Description: Triacs THYR AND TRIACS TAPE 7
• Manufacturer: NXP Semiconductors

Specifications of BTA201W-600E T/R

• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 13.7 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 12 mA
• Forward Voltage Drop: 1.5 V @ 1.4 A
• Mounting Style: SMD/SMT
• Package / Case: SC-73
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTA201W-600E,115

NXP Semiconductors
BTA201W_SER_3
Product data sheet
Fig 1.
Fig 2.
P
(W)
I
tot
TSM
(A)
1.5
1.0
0.5
0.0
16
12
8
4
0
1
0
Total power dissipation as a function of RMS on-state current; maximum values
f = 50 Hz
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
= conduction angle
0.2
0.4
10
Rev. 03 — 13 March 2008
0.6
1 A Three-quadrant triacs high commutation
0.8
10
2
BTA201W series E
number of cycles (n)
1
I
T
120
90
60
30
T
= 180
j(init)
I
T(RMS)
= 25 C max
T
© NXP B.V. 2008. All rights reserved.
003aab299
(A)
001aag959
I
TSM
t
1.2
10
3
3 of 13