BTA212X-600E NXP Semiconductors, BTA212X-600E Datasheet - Page 3
![Triacs RAIL TRIAC](/photos/16/4/160470/sot186a_sml.jpg)
BTA212X-600E
Manufacturer Part Number
BTA212X-600E
Description
Triacs RAIL TRIAC
Manufacturer
NXP Semiconductors
Datasheet
1.BTA212X-600F127.pdf
(7 pages)
Specifications of BTA212X-600E
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
105 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
10 mA
Holding Current (ih Max)
25 mA
Forward Voltage Drop
1.6 V @ 17A
Mounting Style
SMD/SMT
Package / Case
SOT-186A
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTA212X-600E,127
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BTA212X-600E
Manufacturer:
NXP
Quantity:
10
Part Number:
BTA212X-600E
Manufacturer:
WEEN/瑞能
Quantity:
20 000
Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
June 2003
Three quadrant triacs
guaranteed commutation
j
SYMBOL
dV
dI
dI
= 25 ˚C unless otherwise stated
com
com
D
/dt
/dt
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Critical rate of change of
commutating current
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dV
open circuit
V
I
dV
open circuit
T(RMS)
T(RMS)
DM
j
DM
DM
= 110 ˚C; exponential
com
com
= 67% V
= 400 V; T
= 400 V; T
/dt = 10 V/ s; gate
/dt = 0.1 V/ s; gate
= 12 A;
= 12 A;
DRM(max)
3
BTA212X-
j
j
= 125 ˚C;
= 125 ˚C;
;
...D
1.0
3.5
30
BTA212X series D, E and F
MIN.
...E
8.0
60
16
...F
70
21
32
Product specification
MAX.
-
-
-
Rev 3.000
UNIT
A/ms
A/ms
V/ s