Z0103NA NXP Semiconductors, Z0103NA Datasheet - Page 3

• Manufacturer Part Number: Z0103NA
• Description: Triacs BULKSL TRIAC
• Manufacturer: NXP Semiconductors

Specifications of Z0103NA

• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 8.5 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.3 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 7 mA
• Forward Voltage Drop: 1.6 V @ 1 A
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Z0103NA,412

Philips Semiconductors
9397 750 10102
Product data
Fig 1. Maximum on-state power dissipation as a
Fig 3. Maximum permissible non-repetitive peak
P tot
(W)
I TSM
= conduction angle
(A)
1.6
1.2
0.8
0.4
10
10
function of RMS on-state current; typical
values.
on-state current as a function of surge duration
for sinusoidal currents; typical values.
0
10
-1
2
1
0
10
-5
I T / t limit
0.4
10
-4
0.8
10
I T(RMS) (A)
-3
t s (s)
003aaa199
180
120
003aaa207
90
60
30
=
Rev. 02 — 12 September 2002
1.2
10
-2
Fig 2. Maximum permissible non-repetitive peak
Fig 4. Maximum permissible RMS on-state current as
I T(RMS)
I TSM
n = number of cycles at f = 50 Hz
(A)
(A)
10
4
8
6
2
0
1.2
0.8
on-state current as a function of number of
cycles for sinusoidal currents; typical values.
0.4
a function of lead temperature and solder point
temperature; typical values.
1
0
0
Z0103/07/09 series
SOT54B
(T lead )
10
50
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
10
100
2
T lead , T sp ( C)
SOT223
(T sp )
003aaa200
003aaa201
n
10
150
3
Triacs
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